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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China TOSHIBA 2SC2713-GR LF General Purpose Silicon NPN Transistor with High Voltage
China TOSHIBA 2SC2713-GR LF General Purpose Silicon NPN Transistor with High Voltage

  1. China TOSHIBA 2SC2713-GR LF General Purpose Silicon NPN Transistor with High Voltage

TOSHIBA 2SC2713-GR LF General Purpose Silicon NPN Transistor with High Voltage

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Emitter-Base Voltage(Vebo) 5V
Current - Collector Cutoff 100nA
DC Current Gain 200@2mA,6V
Transition frequency(fT) 100MHz
Number 1 NPN
Vce Saturation(VCE(sat)) 300mV@10mA,1mA
type NPN
Pd - Power Dissipation 150mW
Current - Collector(Ic) 100mA
Collector - Emitter Voltage VCEO 120V
Operating Temperature -
Description Bipolar (BJT) Transistor NPN 120V 100mA 100MHz 150mW Surface Mount TO-236-3
Mfr. Part # 2SC2713-GR,LF
Package TO-236-3
Model Number 2SC2713-GR,LF

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  1. Product Details
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Product Specification

Emitter-Base Voltage(Vebo) 5V Current - Collector Cutoff 100nA
DC Current Gain 200@2mA,6V Transition frequency(fT) 100MHz
Number 1 NPN Vce Saturation(VCE(sat)) 300mV@10mA,1mA
type NPN Pd - Power Dissipation 150mW
Current - Collector(Ic) 100mA Collector - Emitter Voltage VCEO 120V
Operating Temperature - Description Bipolar (BJT) Transistor NPN 120V 100mA 100MHz 150mW Surface Mount TO-236-3
Mfr. Part # 2SC2713-GR,LF Package TO-236-3
Model Number 2SC2713-GR,LF

Product Overview

The TOSHIBA 2SC2713 is a silicon NPN epitaxial transistor utilizing the PCT process. It is designed for audio frequency general purpose amplifier applications, offering high voltage capabilities (VCEO = 120 V), excellent hFE linearity, high hFE (200 to 700), and low noise (NF = 1dB typ.). It is complementary to the 2SA1163 and comes in a small package.

Product Attributes

  • Brand: TOSHIBA
  • Origin: Japan (implied by manufacturer)
  • Material: Silicon
  • Package: JEDEC TO-236MOD / JEITA SC-59 (2-3F1A)
  • Weight: 0.012 g (typ.)

Technical Specifications

CharacteristicsSymbolTest ConditionMinTyp.MaxUnit
Collector cut-off currentICBOVCB = 120 V, IE = 00.1A
Emitter cut-off currentIEBOVEB = 5 V, IC = 00.1A
DC current gainhFE (Note)VCE = 6 V, IC = 2 mA200700
Collector-emitter saturation voltageVCE (sat)IC = 10 mA, IB = 1 mA0.3V
Transition frequencyfTVCE = 6 V, IC = 1 mA100MHz
Collector output capacitanceCobVCB = 10 V, IE = 0, f = 1 MHz3.0pF
Noise figureNFVCE = 6 V, IC = 0.1 mA, f = 1 kHz, RG = 10 k1.010dB

Absolute Maximum Ratings

CharacteristicsSymbolRatingUnit
Collector-base voltageVCBO120V
Collector-emitter voltageVCEO120V
Emitter-base voltageVEBO5V
Collector currentIC100mA
Base currentIB20mA
Collector power dissipationPC150mW
Junction temperatureTj125C
Storage temperature rangeTstg55 to 125C

2410121841_TOSHIBA-2SC2713-GR-LF_C2762675.pdf

Company Details

Bronze Gleitlager

,

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 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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