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Hefei Purple Horn E-Commerce Co., Ltd.

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China PNP Silicon Transistor UTC 2SB649AG-C-AB3-R Suitable for Power Amplifier
China PNP Silicon Transistor UTC 2SB649AG-C-AB3-R Suitable for Power Amplifier

  1. China PNP Silicon Transistor UTC 2SB649AG-C-AB3-R Suitable for Power Amplifier

PNP Silicon Transistor UTC 2SB649AG-C-AB3-R Suitable for Power Amplifier

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Emitter-Base Voltage(Vebo) 5V
Current - Collector Cutoff 10uA
DC Current Gain 100@150mA,5V
Transition frequency(fT) 140MHz
Vce Saturation(VCE(sat)) 1V
type PNP
Pd - Power Dissipation 500mW
Current - Collector(Ic) 1.5A
Collector - Emitter Voltage VCEO 160V
Operating Temperature -
Description Bipolar (BJT) Transistor PNP 160V 1.5A 140MHz 500mW Surface Mount SOT-89
Mfr. Part # 2SB649AG-C-AB3-R
Package SOT-89
Model Number 2SB649AG-C-AB3-R

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  1. Product Details
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Product Specification

Emitter-Base Voltage(Vebo) 5V Current - Collector Cutoff 10uA
DC Current Gain 100@150mA,5V Transition frequency(fT) 140MHz
Vce Saturation(VCE(sat)) 1V type PNP
Pd - Power Dissipation 500mW Current - Collector(Ic) 1.5A
Collector - Emitter Voltage VCEO 160V Operating Temperature -
Description Bipolar (BJT) Transistor PNP 160V 1.5A 140MHz 500mW Surface Mount SOT-89 Mfr. Part # 2SB649AG-C-AB3-R
Package SOT-89 Model Number 2SB649AG-C-AB3-R

Product Overview

The UNISONIC TECHNOLOGIES CO., LTD 2SB649/A is a PNP Silicon Transistor designed for general-purpose power applications. It is particularly suited as a complementary pair with the UTC 2SD669/A in low-frequency power amplifier circuits.

Product Attributes

  • Brand: UNISONIC TECHNOLOGIES CO., LTD
  • Material: Silicon
  • Certifications: Lead Free, Halogen Free

Technical Specifications

ParameterSymbol2SB6492SB649AUnitConditions
Collector-Base VoltageVCBO -180V
Collector-Emitter VoltageVCEO-120-160V
Emitter-Base VoltageVEBO -5V
Collector CurrentIC -1.5A
Collector Peak CurrentIC(PEAK) -3A
Power Dissipation (SOT-89)PD0.5W
Power Dissipation (SOT-223)PD1W
Power Dissipation (TO-92/TO-92NL)PD0.6W
Power Dissipation (TO-126)PD1W
Power Dissipation (TO-126C/TO-126S)PD1.3W
Power Dissipation (TO-252)PD2W
Junction TemperatureTJ+150C
Storage TemperatureTSTG-40 ~ +150C
Junction to Case (SOT-89)JC38C/W
Junction to Case (SOT-223)JC15C/W
Junction to Case (TO-92/TO-92NL)JC80C/W
Junction to Case (TO-126)JC6.25C/W
Junction to Case (TO-126C/TO-126S)JC10C/W
Junction to Case (TO-252)JC4.5C/W
Collector to Base Breakdown VoltageBVCBO -180VIC=-1mA, IE=0
Collector to Emitter Breakdown VoltageBVCEO-120-160VIC=-10mA, RBE=
Emitter to Base Breakdown VoltageBVEBO -5VIE=-1mA, IC=0
Collector Cut-off CurrentICBO -10AVCB=-160V, IE=0
DC Current Gain (hFE1)hFE160-32060-200VCE=-5V, IC=-150mA (note)
DC Current Gain (hFE2)hFE230VCE=-5V, IC=-500mA (note)
Collector-Emitter Saturation VoltageVCE(SAT) -1VIC=-600mA, IB=-50mA
Base-Emitter VoltageVBE -1.5VVCE=-5V, IC=-150mA
Current Gain Bandwidth ProductfT140MHzVCE=-5V,IC=-150mA
Output CapacitanceCob27pFVCB=-10V, IE=0, f=1MHz

2409272301_UTC-2SB649AG-C-AB3-R_C87883.pdf

Company Details

Bronze Gleitlager

,

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 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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