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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China Silkor MJD127D Silicon PNP Darlington Power Transistor Designed for Operation in
China Silkor MJD127D Silicon PNP Darlington Power Transistor Designed for Operation in

  1. China Silkor MJD127D Silicon PNP Darlington Power Transistor Designed for Operation in

Silkor MJD127D Silicon PNP Darlington Power Transistor Designed for Operation in

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Description Bipolar (BJT) Transistor PNP 100V 8A 4MHz 1.75W Surface Mount TO-252
Mfr. Part # MJD127D
Package TO-252
Model Number MJD127D

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  1. Product Details
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Product Specification

Description Bipolar (BJT) Transistor PNP 100V 8A 4MHz 1.75W Surface Mount TO-252 Mfr. Part # MJD127D
Package TO-252 Model Number MJD127D

Product Overview

The MJD127D is a Silicon PNP Darlington Power Transistor designed for general purpose amplifier and low speed switching applications. It features a low collector-emitter saturation voltage, high DC current gain, and is 100% avalanche tested for robust device performance and reliable operation. The lead is formed for surface mount applications.

Product Attributes

  • Brand: SLKORMICRO (implied by URL)

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
ABSOLUTE MAXIMUM RATINGS (Ta=25)
VCBO Collector-Base Voltage -100 V
VCEO Collector-Emitter Voltage -100 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current-Continuous -8 A
PC Total Power Dissipation @ Ta=25 1.75 W
PC Collector Power Dissipation TC=25 20 W
Rth j-a Thermal Resistance, Junction to Ambient 71.4 /W
TJ Junction Temperature 150
Tstg Storage Temperature Range -55 ~ 150
ELECTRICAL CHARACTERISTICS (TC=25 unless otherwise specified)
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 -100 V
VCE(sat)-1 Collector-Emitter Saturation Voltage IC=-4A; IB= -16mA -2.0 V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC=-8A; IB= -80mA -4.0 V
VBE(sat) Base-Emitter Saturation Voltage IC=-8A; IB= -80mA -4.5 V
VBE(ON) Base-Emitter voltage IC= -4A; VCE= -4V -2.8 V
ICEO Collector Cutoff Current VCE=-50V; IE= 0 -10 uA
IEBO Emitter Cutoff Current VEB=-5V; IC= 0 -2 mA
hFE1 DC Current Gain IC= -4A; VCE=- 4V 1000 12000
hFE2 DC Current Gain IC=-8A; VCE= -4V 100
fT Current-GainBandwidth Product IC=-3A; VCE= -4V 4 MHz
COB Output Capacitance IE=0; VCB= -10V; f= 1.0MHz 300 pF

2409302301_Slkor-MJD127D_C5155435.pdf

Company Details

Bronze Gleitlager

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 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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