| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 50nA |
| DC Current Gain | 100@10mA,1V |
| Transition frequency(fT) | 250MHz |
| Number | 2 PNP |
| type | PNP |
| Vce Saturation(VCE(sat)) | 400mV |
| Pd - Power Dissipation | 200mW |
| Current - Collector(Ic) | 200mA |
| Collector - Emitter Voltage VCEO | 40V |
| Operating Temperature | - |
| Description | Bipolar (BJT) Transistor PNP 40V 200mA 250MHz 200mW Surface Mount SOT-363 |
| Mfr. Part # | MMDT3906 |
| Package | SOT-363 |
| Model Number | MMDT3906 |
View Detail Information
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Product Specification
| Emitter-Base Voltage(Vebo) | 5V | Current - Collector Cutoff | 50nA |
| DC Current Gain | 100@10mA,1V | Transition frequency(fT) | 250MHz |
| Number | 2 PNP | type | PNP |
| Vce Saturation(VCE(sat)) | 400mV | Pd - Power Dissipation | 200mW |
| Current - Collector(Ic) | 200mA | Collector - Emitter Voltage VCEO | 40V |
| Operating Temperature | - | Description | Bipolar (BJT) Transistor PNP 40V 200mA 250MHz 200mW Surface Mount SOT-363 |
| Mfr. Part # | MMDT3906 | Package | SOT-363 |
| Model Number | MMDT3906 |
The MMDT3906 is a dual PNP small signal transistor designed for switching and AF amplifier applications. It features a rugged and reliable construction, meeting UL 94 V-0 flammability rating for its epoxy casing. This RoHS compliant and Lead Free component offers excellent performance characteristics for various electronic designs.
| Symbol | Parameter | Test Conditions | Min | Max | Units |
|---|---|---|---|---|---|
| Maximum Ratings (Ta = 25 ) | |||||
| VCBO | Collector-Base Voltage | -40 | V | ||
| VCEO | Collector-Emitter Voltage | -40 | V | ||
| VEBO | Emitter-Base Voltage | -5 | V | ||
| PC | Collector Power Dissipation | 200 | mW | ||
| IC | Collector Current - Continuous | -200 | mA | ||
| TJ | Junction Temperature | 150 | |||
| TSTG | Storage Temperature | -55 | 150 | ||
| RJA | Thermal Resistance From Junction To Ambient | 625 | /W | ||
| Electrical Characteristics (Ta = 25 ) | |||||
| V(BR)CBO | Collector-Base Breakdown Voltage | IC = -10A, IE =0 | -40 | V | |
| V(BR)CEO | Collector-Emitter Breakdown Voltage | IC = -1mA, IB =0 | -40 | V | |
| V(BR)EBO | Emitter-Base Breakdown Voltage | IE = -10A, IC =0 | -5 | V | |
| IBL | Base Cutoff Current | VCE = -30V, VBE(OFF) =-3V | -50 | nA | |
| ICEX | Collector Cutoff Current | VCE = -30V, VBE(OFF) =-3V | -50 | nA | |
| VCE(sat) | Collector-Emitter Saturation Voltage | IC = -10mA, IB =-1mA | -0.25 | V | |
| IC = -50mA, IB =-5mA | -0.4 | V | |||
| VBE(sat) | Base-Emitter Saturation Voltage | IC = -10mA, IB =-1mA | -0.65 | -0.85 | V |
| IC = -50mA, IB =-5mA | -0.95 | V | |||
| hFE | DC Current Gain | VCE = -1V, IC =-0.1mA | 60 | ||
| VCE = -1V, IC =-1mA | 80 | ||||
| VCE = -1V, IC =-10mA | 100 | 300 | |||
| VCE = -1V, IC =-50mA | 60 | ||||
| fT | Transition Frequency | VCE = -20V, IC =-10mA, f=100MHz | 250 | MHz | |
| Cob | Output Capacitance | VCB = -5V, IE =0, f=1MHz | 4.5 | pF | |
| td | Delay Time | VCC = -3V, IC =-10mA , VBE(OFF) = -0.5V, IB1 =-1mA | 35 | nS | |
| tr | Rise Time | 35 | nS | ||
| ts | Storage Time | VCC = -3V, IC =-10mA , IB1 =- IB2 =-1mA | 225 | nS | |
| tf | Fall Time | 75 | nS | ||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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