Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 7V |
| Current - Collector Cutoff | 20nA |
| DC Current Gain | 200@1A,5V |
| Transition frequency(fT) | 120MHz |
| Vce Saturation(VCE(sat)) | 275mV |
| type | PNP |
| Pd - Power Dissipation | 1.6W |
| Current - Collector(Ic) | 4A |
| Collector - Emitter Voltage VCEO | 140V |
| Operating Temperature | - |
| Description | Bipolar (BJT) Transistor PNP 140V 4A 120MHz 1.6W Surface Mount SOT-223 |
| Mfr. Part # | UP3855G-AA3-R |
| Package | SOT-223 |
| Model Number | UP3855G-AA3-R |
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Product Specification
| Emitter-Base Voltage(Vebo) | 7V | Current - Collector Cutoff | 20nA |
| DC Current Gain | 200@1A,5V | Transition frequency(fT) | 120MHz |
| Vce Saturation(VCE(sat)) | 275mV | type | PNP |
| Pd - Power Dissipation | 1.6W | Current - Collector(Ic) | 4A |
| Collector - Emitter Voltage VCEO | 140V | Operating Temperature | - |
| Description | Bipolar (BJT) Transistor PNP 140V 4A 120MHz 1.6W Surface Mount SOT-223 | Mfr. Part # | UP3855G-AA3-R |
| Package | SOT-223 | Model Number | UP3855G-AA3-R |
The UTC UP3855 is a PNP silicon transistor designed for medium power applications, featuring low saturation voltage. This characteristic leads to very low on-state losses, making it ideal for driving, power management functions, and DC-DC circuits.
| Parameter | Symbol | SOT-223 (Note 1) | SOT-89 (Note 2) | UNIT |
| Power Dissipation | PD | 3.0 | 0.6 | W |
| Junction to Ambient Thermal Resistance | θJA | 42 | 78 | °C/W |
| Parameter | Symbol | Test Conditions | MIN | TYP | MAX | UNIT |
| Collector-Base Breakdown Voltage | VCBO | IC=-100μA | -180 | -200 | V | |
| Collector-Emitter Breakdown Voltage | VCEO | IC=-10mA (Note 1) | -140 | -160 | V | |
| Emitter-Base Breakdown Voltage | VEBO | IE=-100μA | -7.0 | -8.0 | V | |
| Collector Cut-Off Current | ICBO | VCB=-150V | <1 | -20 | nA | |
| Collector Cut-Off Current | ICER | VCB=-150V, R≤1kΩ | <1 | -20 | nA | |
| Emitter Cut-Off Current | IEBO | VEB=-6V | <1 | -10 | nA | |
| Collector-Emitter Saturation Voltage | VCE(SAT) | IC=-0.1A, IB=-5mA | -40 | -60 | mV | |
| IC=-0.5A, IB=-50mA | -55 | -80 | mV | |||
| IC=-1A, IB=-100mA | -85 | -120 | mV | |||
| IC=-3A, IB=-300mA | -275 | -360 | mV | |||
| Base-Emitter Saturation Voltage | VBE(SAT) | IC=-3A, IB=-300mA(Note 1) | -940 | -1040 | mV | |
| IC=-3A, IB=-300mA | -940 | -1040 | mV | |||
| Static Forward Current Transfer Ratio | hFE | IC=-10mA, VCE=-5V | 100 | 225 | ||
| IC=-1A, VCE=-5V | 100 | 200 | 300 | |||
| IC=-3A, VCE=-5V | 45 | |||||
| Transition Frequency | fT | IC=-100mA, VCE=-10V f=50MHz | 120 | MHz | ||
| Output Capacitance | COBO | VCB=-10V, f=1MHz | 33 | pF | ||
| Switching Times | tON | IC=-1A, VCC=-50V, IB1=-IB2=-100mA | 150 | ns | ||
| Switching Times | tOFF | IC=-1A, VCC=-50V, IB1=-IB2=-100mA | 750 | ns |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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