Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 3V |
| Current - Collector Cutoff | 1uA |
| DC Current Gain | 160@20mA,10V |
| Transition frequency(fT) | 7GHz |
| Vce Saturation(VCE(sat)) | - |
| type | NPN |
| Pd - Power Dissipation | 200mW |
| Current - Collector(Ic) | 100mA |
| Collector - Emitter Voltage VCEO | 12V |
| Operating Temperature | - |
| Description | Bipolar (BJT) Transistor NPN 12V 100mA 7GHz 200mW Surface Mount SOT-23-3 |
| Mfr. Part # | 2SC3356G-B-AE2-R |
| Package | SOT-23-3 |
| Model Number | 2SC3356G-B-AE2-R |
View Detail Information
Explore similar products
General Purpose Power Amplification Transistor BLUE ROCKET NJW0302GC Silicon PNP
NPN Transistor CBI MMBT3904 SOT23 Package Epitaxial Planar Die Construction for
NPN Bipolar Transistor Guangdong Hottech 2SC1623 L5 with 200mW Power Dissipation
Jilin Sino Microelectronics 3DD13003A 126 NPN transistor for high frequency
Product Specification
| Emitter-Base Voltage(Vebo) | 3V | Current - Collector Cutoff | 1uA |
| DC Current Gain | 160@20mA,10V | Transition frequency(fT) | 7GHz |
| Vce Saturation(VCE(sat)) | - | type | NPN |
| Pd - Power Dissipation | 200mW | Current - Collector(Ic) | 100mA |
| Collector - Emitter Voltage VCEO | 12V | Operating Temperature | - |
| Description | Bipolar (BJT) Transistor NPN 12V 100mA 7GHz 200mW Surface Mount SOT-23-3 | Mfr. Part # | 2SC3356G-B-AE2-R |
| Package | SOT-23-3 | Model Number | 2SC3356G-B-AE2-R |
The UNISONIC TECHNOLOGIES CO., LTD 2SC3356 is an NPN Silicon Transistor designed for high-frequency, low-noise amplifier applications. It is suitable for various electronic circuits including DC/DC converters, supply line switching, battery chargers, LCD backlighting, peripheral drivers, low voltage applications (lamps, LEDs), and inductive load drivers (relays, buzzers, motors). Key features include low noise, high gain, and high power gain.
| Parameter | Symbol | SOT-23-3/SOT-23 | SOT-89 | Unit | Conditions |
| Collector to Base Breakdown Voltage | BVCBO | 20 | V | IC=10A, IE=0 | |
| Collector to Emitter Breakdown Voltage | BVCEO | 12 | V | IC=1mA, RBE= | |
| Emitter to Base Breakdown Voltage | BVEBO | 3 | V | IE=10A, IC=0 | |
| Collector Current | IC | 100 | mA | ||
| Power Dissipation | PD | 200 | 500 | mW | |
| Junction Temperature | TJ | +150 | +150 | ||
| Storage Temperature | TSTG | -65 ~ +150 | -65 ~ +150 | ||
| Collector-Base Cut-Off Current | ICBO | 1.0 | 1.0 | A | VCB =10V,IE =0 |
| Emitter-Base Cut-Off Current | IEBO | 1.0 | 1.0 | A | VEB =1 V, IC=0 |
| DC Current Gain | hFE | 50 - 300 | 50 - 300 | VCE =10 V, IC =20 mA | |
| Gain Bandwidth Product | fT | 7 | 7 | GHz | VCE =10 V, IC =20 mA |
| Feed-Back Capacitance | CRE | 1.0 | 1.0 | pF | VCB =10 V, IE =0, f =1.0MHz |
| Noise Figure | NF | 2.0 | 2.0 | dB | VCE =10 V, IC =7mA, f =1.0GHz |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
.gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c... .gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c...
Get in touch with us
Leave a Message, we will call you back quickly!