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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China High Current Gain NPN Silicon Epitaxial Planar Transistor Slkor BC817-25 for
China High Current Gain NPN Silicon Epitaxial Planar Transistor Slkor BC817-25 for

  1. China High Current Gain NPN Silicon Epitaxial Planar Transistor Slkor BC817-25 for

High Current Gain NPN Silicon Epitaxial Planar Transistor Slkor BC817-25 for

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Emitter-Base Voltage(Vebo) 5V
Current - Collector Cutoff 100nA
DC Current Gain 600@100mA,1V
Transition frequency(fT) 100MHz
Vce Saturation(VCE(sat)) 700mV
type NPN
Pd - Power Dissipation 300mW
Current - Collector(Ic) 500mA
Collector - Emitter Voltage VCEO 45V
Description Bipolar (BJT) Transistor NPN 45V 500mA 100MHz 300mW Surface Mount SOT-23
Mfr. Part # BC817-25
Package SOT-23
Model Number BC817-25

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  1. Product Details
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Product Specification

Emitter-Base Voltage(Vebo) 5V Current - Collector Cutoff 100nA
DC Current Gain 600@100mA,1V Transition frequency(fT) 100MHz
Vce Saturation(VCE(sat)) 700mV type NPN
Pd - Power Dissipation 300mW Current - Collector(Ic) 500mA
Collector - Emitter Voltage VCEO 45V Description Bipolar (BJT) Transistor NPN 45V 500mA 100MHz 300mW Surface Mount SOT-23
Mfr. Part # BC817-25 Package SOT-23
Model Number BC817-25

Product Overview

The BC817 is an NPN Silicon Epitaxial Planar Transistor designed for general AF applications. It offers a high collector current capability, high current gain, and a low collector-emitter saturation voltage. Complementary to the BC807 (PNP).

Product Attributes

  • Type: NPN Silicon Epitaxial Planar Transistor
  • Brand: slkormicro.com

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Collector-base breakdown voltage VCBO IC= 10A, IE=0 50 V
Collector-emitter breakdown voltage VCEO IC= 10mA, IB=0 45 V
Emitter-base breakdown voltage VEBO IE=1A, IC=0 5 V
Collector cut-off current ICBO VCB= 45 V, IE=0 0.1 A
Emitter cut-off current IEBO VEB=4V, IC=0 0.1 A
DC current gain (hFE(1)) hFE VCE= 1V, IC= 100mA 100 600
DC current gain (hFE(2)) hFE VCE= 1V, IC= 500mA 40
Collector-emitter saturation voltage VCE(sat) IC= 500mA, IB= 50mA 0.7 V
Base-emitter saturation voltage VBE(sat) IC= 500mA, IB= 50mA 1.2 V
Base-emitter voltage VBE VCE= 1 V, IC= 500mA 1.2 V
Collector capacitance Cob VCB=10V, f=1MHz 10 pF
Transition frequency fT VCE= 5 V, IC=10mA, f=100MHz 100 MHz

CLASSIFICATION OF hFE (1)

Rank BC817-16 BC817-25 BC817-40
Range 100-250 160-400 250-600

SOT-23 Pinout

1. BASE
2. EMITTER
3. COLLECTOR

MAXIMUM RATINGS

Symbol Parameter Value Unit
VCBO Collector-Base Voltage 50 V
VCEO Collector-Emitter Voltage 45 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current 500 mA
PC Collector Power Dissipation 300 mW
RJA Thermal Resistance From Junction To Ambient 417 /W
Tj Junction Temperature 150
Tstg Storage Temperature -55+150

SOT-23 Package Outline Dimensions

Symbol Dimensions In Millimeters Dimensions In Inches
A 0.900 - 1.150 0.035 - 0.045
A1 0.000 - 0.100 0.000 - 0.004
A2 0.900 - 1.050 0.035 - 0.041
b 0.300 - 0.500 0.012 - 0.020
c 0.080 - 0.150 0.003 - 0.006
D 2.800 - 3.000 0.110 - 0.118
E 1.200 - 1.400 0.047 - 0.055
E1 2.250 - 2.550 0.089 - 0.100
e 0.950 TYP 0.037 TYP
e1 1.800 - 2.000 0.071 - 0.079
L
L1 0.300 - 0.500 0.012 - 0.020
0 - 8 0 - 8

2401051154_Slkor-BC817-25_C609807.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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Get in touch with us

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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