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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China PNP Transistor Slkor MMBT5401T Medium Power Amplification Small Surface Mount
China PNP Transistor Slkor MMBT5401T Medium Power Amplification Small Surface Mount

  1. China PNP Transistor Slkor MMBT5401T Medium Power Amplification Small Surface Mount

PNP Transistor Slkor MMBT5401T Medium Power Amplification Small Surface Mount

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Emitter-Base Voltage(Vebo) 5V
Current - Collector Cutoff 50nA
DC Current Gain 300@10mA,5V
Transition frequency(fT) 100MHz
type PNP
Vce Saturation(VCE(sat)) 500mV@50mA,5mA
Pd - Power Dissipation 200mW
Current - Collector(Ic) 600mA
Collector - Emitter Voltage VCEO 150V
Description Bipolar (BJT) Transistor PNP 150V 600mA 100MHz 200mW Surface Mount SOT-523
Mfr. Part # MMBT5401T
Package SOT-523
Model Number MMBT5401T

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  1. Product Details
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Product Specification

Emitter-Base Voltage(Vebo) 5V Current - Collector Cutoff 50nA
DC Current Gain 300@10mA,5V Transition frequency(fT) 100MHz
type PNP Vce Saturation(VCE(sat)) 500mV@50mA,5mA
Pd - Power Dissipation 200mW Current - Collector(Ic) 600mA
Collector - Emitter Voltage VCEO 150V Description Bipolar (BJT) Transistor PNP 150V 600mA 100MHz 200mW Surface Mount SOT-523
Mfr. Part # MMBT5401T Package SOT-523
Model Number MMBT5401T

Product Overview

The MMBT5401T is a PNP transistor designed for medium power amplification and switching applications. It features a small surface mount package and is complementary to the MMBT5551T. This transistor is ideal for various electronic circuits requiring reliable amplification and switching capabilities.

Product Attributes

  • Type: PNP Transistor
  • Complementary to: MMBT5551T
  • Package: Small Surface Mount Package (SOT-523)
  • Marking: 2L

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
MAXIMUM RATINGS (Ta=25 unless otherwise noted)
Collector-Base Voltage VCBO -160 V
Collector-Emitter Voltage VCEO -150 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC -600 mA
Collector Power Dissipation PC 200 mW
Thermal Resistance From Junction To Ambient RJA 625 /W
Junction Temperature Tj 150
Storage Temperature Tstg -55 +150
ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)
Collector-base breakdown voltage V(BR)CBO IC=-100A, IE=0 -160 V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -150 V
Emitter-base breakdown voltage V(BR)EBO IE=-10A, IC=0 -5 V
Collector cut-off current ICBO VCB=-120V, IE=0 -50 nA
Emitter cut-off current IEBO VEB=-3V, IC=0 -50 nA
DC current gain hFE VCE=-5V, IC=-1mA 50
VCE=-5V, IC=-10mA 60 300
VCE=-5V, IC=-50mA 50
Collector-emitter saturation voltage VCE(sat) IC=-50mA, IB=-5mA -0.5 V
IC=-10mA, IB=-1mA -0.2 V
Base-emitter saturation voltage VBE(sat) IC=-50mA, IB=-5mA -1 V
IC=-10mA, IB=-1mA -1 V
Transition frequency fT VCE=-10V,IC=-10mA , f=100MHz 100 MHz
Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz 6 pF

Package Outline: SOT-523

Plastic surface mounted package; 3 leads.

Symbol Dimension in Millimeters Min Max
A 0.60 0.80
A1 0.010 0.100
B 0.95 1.05
bp 0.26 0.40
bq 0.16 0.30
C 0.09 0.15
D 1.50 1.70
E 0.70 0.85
HE 1.45 1.75
Lp 0.16 0.36
0 5

2412171034_Slkor-MMBT5401T_C42415188.pdf

Company Details

Bronze Gleitlager

,

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 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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