| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 50nA |
| DC Current Gain | 300@10mA,5V |
| Transition frequency(fT) | 100MHz |
| type | PNP |
| Vce Saturation(VCE(sat)) | 500mV@50mA,5mA |
| Pd - Power Dissipation | 200mW |
| Current - Collector(Ic) | 600mA |
| Collector - Emitter Voltage VCEO | 150V |
| Description | Bipolar (BJT) Transistor PNP 150V 600mA 100MHz 200mW Surface Mount SOT-523 |
| Mfr. Part # | MMBT5401T |
| Package | SOT-523 |
| Model Number | MMBT5401T |
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Product Specification
| Emitter-Base Voltage(Vebo) | 5V | Current - Collector Cutoff | 50nA |
| DC Current Gain | 300@10mA,5V | Transition frequency(fT) | 100MHz |
| type | PNP | Vce Saturation(VCE(sat)) | 500mV@50mA,5mA |
| Pd - Power Dissipation | 200mW | Current - Collector(Ic) | 600mA |
| Collector - Emitter Voltage VCEO | 150V | Description | Bipolar (BJT) Transistor PNP 150V 600mA 100MHz 200mW Surface Mount SOT-523 |
| Mfr. Part # | MMBT5401T | Package | SOT-523 |
| Model Number | MMBT5401T |
The MMBT5401T is a PNP transistor designed for medium power amplification and switching applications. It features a small surface mount package and is complementary to the MMBT5551T. This transistor is ideal for various electronic circuits requiring reliable amplification and switching capabilities.
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| MAXIMUM RATINGS (Ta=25 unless otherwise noted) | ||||||
| Collector-Base Voltage | VCBO | -160 | V | |||
| Collector-Emitter Voltage | VCEO | -150 | V | |||
| Emitter-Base Voltage | VEBO | -5 | V | |||
| Collector Current | IC | -600 | mA | |||
| Collector Power Dissipation | PC | 200 | mW | |||
| Thermal Resistance From Junction To Ambient | RJA | 625 | /W | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | +150 | |||
| ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) | ||||||
| Collector-base breakdown voltage | V(BR)CBO | IC=-100A, IE=0 | -160 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=-1mA, IB=0 | -150 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=-10A, IC=0 | -5 | V | ||
| Collector cut-off current | ICBO | VCB=-120V, IE=0 | -50 | nA | ||
| Emitter cut-off current | IEBO | VEB=-3V, IC=0 | -50 | nA | ||
| DC current gain | hFE | VCE=-5V, IC=-1mA | 50 | |||
| VCE=-5V, IC=-10mA | 60 | 300 | ||||
| VCE=-5V, IC=-50mA | 50 | |||||
| Collector-emitter saturation voltage | VCE(sat) | IC=-50mA, IB=-5mA | -0.5 | V | ||
| IC=-10mA, IB=-1mA | -0.2 | V | ||||
| Base-emitter saturation voltage | VBE(sat) | IC=-50mA, IB=-5mA | -1 | V | ||
| IC=-10mA, IB=-1mA | -1 | V | ||||
| Transition frequency | fT | VCE=-10V,IC=-10mA , f=100MHz | 100 | MHz | ||
| Collector output capacitance | Cob | VCB=-10V, IE=0, f=1MHz | 6 | pF | ||
Plastic surface mounted package; 3 leads.
| Symbol | Dimension in Millimeters | Min | Max |
|---|---|---|---|
| A | 0.60 | 0.80 | |
| A1 | 0.010 | 0.100 | |
| B | 0.95 | 1.05 | |
| bp | 0.26 | 0.40 | |
| bq | 0.16 | 0.30 | |
| C | 0.09 | 0.15 | |
| D | 1.50 | 1.70 | |
| E | 0.70 | 0.85 | |
| HE | 1.45 | 1.75 | |
| Lp | 0.16 | 0.36 | |
| 0 | 5 |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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