| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 100nA |
| DC Current Gain | 100@100mA,1V |
| Transition frequency(fT) | 120MHz |
| Number | 1 PNP |
| Vce Saturation(VCE(sat)) | 400mV@500mA,20mA |
| type | PNP |
| Pd - Power Dissipation | 200mW |
| Current - Collector(Ic) | 800mA |
| Collector - Emitter Voltage VCEO | 25V |
| Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor PNP 25V 800mA 120MHz 200mW Surface Mount SOT-23 |
| Mfr. Part # | 2SA1298-Y,LF |
| Package | SOT-23 |
| Model Number | 2SA1298-Y,LF |
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Product Specification
| Emitter-Base Voltage(Vebo) | 5V | Current - Collector Cutoff | 100nA |
| DC Current Gain | 100@100mA,1V | Transition frequency(fT) | 120MHz |
| Number | 1 PNP | Vce Saturation(VCE(sat)) | 400mV@500mA,20mA |
| type | PNP | Pd - Power Dissipation | 200mW |
| Current - Collector(Ic) | 800mA | Collector - Emitter Voltage VCEO | 25V |
| Operating Temperature | -55℃~+150℃ | Description | Bipolar (BJT) Transistor PNP 25V 800mA 120MHz 200mW Surface Mount SOT-23 |
| Mfr. Part # | 2SA1298-Y,LF | Package | SOT-23 |
| Model Number | 2SA1298-Y,LF |
The TOSHIBA 2SA1298 is a silicon PNP epitaxial transistor manufactured using the PCT process. It is designed for low frequency power amplifier and power switching applications. Key advantages include high DC current gain (hFE = 100 to 320), low saturation voltage (VCE (sat) = -0.4 V max), and suitability as a driver stage for small motors. It is complementary to the 2SC3265 and comes in a small package.
| Characteristics | Symbol | Test Condition | Min | Typ. | Max | Unit |
| Collector cut-off current | ICBO | VCB = -30 V, IE = 0 | - | - | -0.1 | µA |
| Emitter cut-off current | IEBO | VEB = -50 V, IC = 0 | - | - | -0.1 | µA |
| Collector-emitter breakdown voltage | V(BR)CEO | IC = -10 mA, IB = 0 | -25 | - | - | V |
| Emitter-base breakdown voltage | V(BR)EBO | IE = -0.1 mA, IC = 0 | -5 | - | - | V |
| DC current gain | hFE (1) | VCE = -1 V, IC = -100 mA | 100 | - | 320 | - |
| hFE (2) | VCE = -1 V, IC = -800 mA | 40 | - | - | - | |
| Collector-emitter saturation voltage | VCE (sat) | IC = -500 mA, IB = -20 mA | - | - | -0.4 | V |
| Base-emitter voltage | VBE | VCE = -1 V, IC = -10 mA | -0.5 | - | -0.8 | V |
| Transition frequency | fT | VCE = -5 V, IC = -10 mA | - | 120 | - | MHz |
| Collector output capacitance | Cob | VCB = -10 V, IE = 0, f = 1 MHz | - | 13 | - | pF |
| Characteristics | Symbol | Rating | Unit |
| Collector-base voltage | VCBO | -30 | V |
| Collector-emitter voltage | VCEO | -25 | V |
| Emitter-base voltage | VEBO | -5 | V |
| Collector current | IC | -800 | mA |
| Base current | IB | -160 | mA |
| Collector power dissipation | PC | 200 | mW |
| Junction temperature | Tj | 150 | °C |
| Storage temperature range | Tstg | -55 to 150 | °C |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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