| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 100nA |
| DC Current Gain | 25@400mA,6V |
| Transition frequency(fT) | 200MHz |
| Vce Saturation(VCE(sat)) | 250mV |
| type | PNP |
| Pd - Power Dissipation | 200mW |
| Current - Collector(Ic) | 500mA |
| Collector - Emitter Voltage VCEO | 50V |
| Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor PNP 50V 500mA 200MHz 200mW Surface Mount SC-59 |
| Mfr. Part # | 2SA1313-Y,LF |
| Package | SC-59 |
| Model Number | 2SA1313-Y,LF |
View Detail Information
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Product Specification
| Emitter-Base Voltage(Vebo) | 5V | Current - Collector Cutoff | 100nA |
| DC Current Gain | 25@400mA,6V | Transition frequency(fT) | 200MHz |
| Vce Saturation(VCE(sat)) | 250mV | type | PNP |
| Pd - Power Dissipation | 200mW | Current - Collector(Ic) | 500mA |
| Collector - Emitter Voltage VCEO | 50V | Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor PNP 50V 500mA 200MHz 200mW Surface Mount SC-59 | Mfr. Part # | 2SA1313-Y,LF |
| Package | SC-59 | Model Number | 2SA1313-Y,LF |
The TOSHIBA 2SA1313 is a silicon PNP epitaxial transistor featuring excellent hFE linearity, high voltage capability (VCEO = -50 V min), and a complementary nature to the 2SC3325. It is designed for audio frequency low power amplifier applications, driver stage amplifier applications, and switching applications. Its small package (TO-236MOD/SC-59) makes it suitable for space-constrained designs.
| Characteristics | Symbol | Test Condition | Min | Typ. | Max | Unit |
| Collector cut-off current | ICBO | VCB = -50 V, IE = 0 | - | - | -0.1 | A |
| Emitter cut-off current | IEBO | VEB = -5 V, IC = 0 | - | - | -0.1 | A |
| DC current gain | hFE (1) | VCE = -1 V, IC = -100 mA | 70 | - | 240 | - |
| hFE (2) | VCE = -6 V, IC = -400 mA | 25 | - | - | - | |
| Collector-emitter saturation voltage | VCE (sat) | IC = -100 mA, IB = -10 mA | - | -0.1 | -0.25 | V |
| Base-emitter voltage | VBE | VCE = -1 V, IC = -100 mA | - | -0.8 | -1.0 | V |
| Transition frequency | fT | VCE = -6 V, IC = -20 mA | - | 200 | - | MHz |
| Collector output capacitance | Cob | VCB = -6 V, IE = 0, f = 1 MHz | - | 13 | - | pF |
| Characteristics | Symbol | Rating | Unit |
| Collector-base voltage | VCBO | -50 | V |
| Collector-emitter voltage | VCEO | -50 | V |
| Emitter-base voltage | VEBO | -5 | V |
| Collector current | IC | -500 | mA |
| Base current | IB | -50 | mA |
| Collector power dissipation | PC | 200 | mW |
| Junction temperature | Tj | 150 | C |
| Storage temperature range | Tstg | -55 to 150 | C |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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