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Hefei Purple Horn E-Commerce Co., Ltd.

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China TOSHIBA 2SA1313-Y LF PNP transistor optimized for driver stage amplifier and
China TOSHIBA 2SA1313-Y LF PNP transistor optimized for driver stage amplifier and

  1. China TOSHIBA 2SA1313-Y LF PNP transistor optimized for driver stage amplifier and

TOSHIBA 2SA1313-Y LF PNP transistor optimized for driver stage amplifier and

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Emitter-Base Voltage(Vebo) 5V
Current - Collector Cutoff 100nA
DC Current Gain 25@400mA,6V
Transition frequency(fT) 200MHz
Vce Saturation(VCE(sat)) 250mV
type PNP
Pd - Power Dissipation 200mW
Current - Collector(Ic) 500mA
Collector - Emitter Voltage VCEO 50V
Operating Temperature -55℃~+150℃
Description Bipolar (BJT) Transistor PNP 50V 500mA 200MHz 200mW Surface Mount SC-59
Mfr. Part # 2SA1313-Y,LF
Package SC-59
Model Number 2SA1313-Y,LF

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Product Specification

Emitter-Base Voltage(Vebo) 5V Current - Collector Cutoff 100nA
DC Current Gain 25@400mA,6V Transition frequency(fT) 200MHz
Vce Saturation(VCE(sat)) 250mV type PNP
Pd - Power Dissipation 200mW Current - Collector(Ic) 500mA
Collector - Emitter Voltage VCEO 50V Operating Temperature -55℃~+150℃
Description Bipolar (BJT) Transistor PNP 50V 500mA 200MHz 200mW Surface Mount SC-59 Mfr. Part # 2SA1313-Y,LF
Package SC-59 Model Number 2SA1313-Y,LF

Product Overview

The TOSHIBA 2SA1313 is a silicon PNP epitaxial transistor featuring excellent hFE linearity, high voltage capability (VCEO = -50 V min), and a complementary nature to the 2SC3325. It is designed for audio frequency low power amplifier applications, driver stage amplifier applications, and switching applications. Its small package (TO-236MOD/SC-59) makes it suitable for space-constrained designs.

Product Attributes

  • Brand: TOSHIBA
  • Type: Silicon PNP Epitaxial Transistor (PCT process)
  • Complementary to: 2SC3325
  • Package: JEDEC TO-236MOD / JEITA SC-59
  • Weight: 0.012 g (typ.)
  • Start of commercial production: 1982-12

Technical Specifications

CharacteristicsSymbolTest ConditionMinTyp.MaxUnit
Collector cut-off currentICBOVCB = -50 V, IE = 0---0.1A
Emitter cut-off currentIEBOVEB = -5 V, IC = 0---0.1A
DC current gainhFE (1)VCE = -1 V, IC = -100 mA70-240-
hFE (2)VCE = -6 V, IC = -400 mA25---
Collector-emitter saturation voltageVCE (sat)IC = -100 mA, IB = -10 mA--0.1-0.25V
Base-emitter voltageVBEVCE = -1 V, IC = -100 mA--0.8-1.0V
Transition frequencyfTVCE = -6 V, IC = -20 mA-200-MHz
Collector output capacitanceCobVCB = -6 V, IE = 0, f = 1 MHz-13-pF

Absolute Maximum Ratings

CharacteristicsSymbolRatingUnit
Collector-base voltageVCBO-50V
Collector-emitter voltageVCEO-50V
Emitter-base voltageVEBO-5V
Collector currentIC-500mA
Base currentIB-50mA
Collector power dissipationPC200mW
Junction temperatureTj150C
Storage temperature rangeTstg-55 to 150C

2411220627_TOSHIBA-2SA1313-Y-LF_C5184237.pdf

Company Details

Bronze Gleitlager

,

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 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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