Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 0.6V |
| Current - Collector Cutoff | 100nA |
| DC Current Gain | 400@30mA,5V |
| Transition frequency(fT) | 10GHz |
| type | NPN |
| Pd - Power Dissipation | 800mW |
| Current - Collector(Ic) | 100mA |
| Collector - Emitter Voltage VCEO | 6V |
| Description | Bipolar (BJT) Transistor NPN 6V 100mA 10GHz 800mW Surface Mount UFM |
| Mfr. Part # | MT3S111TU,LF |
| Package | UFM |
| Model Number | MT3S111TU,LF |
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Product Specification
| Emitter-Base Voltage(Vebo) | 0.6V | Current - Collector Cutoff | 100nA |
| DC Current Gain | 400@30mA,5V | Transition frequency(fT) | 10GHz |
| type | NPN | Pd - Power Dissipation | 800mW |
| Current - Collector(Ic) | 100mA | Collector - Emitter Voltage VCEO | 6V |
| Description | Bipolar (BJT) Transistor NPN 6V 100mA 10GHz 800mW Surface Mount UFM | Mfr. Part # | MT3S111TU,LF |
| Package | UFM | Model Number | MT3S111TU,LF |
The TOSHIBA MT3S111TU is a Silicon-Germanium NPN Epitaxial Planar Type transistor designed for VHF-UHF low-noise and low-distortion amplifier applications. It offers a typical low-noise figure of 0.85 dB at 1 GHz and a typical insertion gain of 12.5 dB at 1 GHz, making it suitable for high-frequency amplification.
| Characteristics | Symbol | Test Condition | Min | Typ. | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Collector-emitter voltage | VCES | 13 | V | |||
| Collector-emitter voltage | VCEO | 6 | V | |||
| Emitter-base voltage | VEBO | 0.6 | V | |||
| Collector-current | IC | 100 | mA | |||
| Base-current | IB | 10 | mA | |||
| Collector power dissipation | PC | (Note 1) | 800 | mW | ||
| Junction temperature | Tj | 150 | C | |||
| Storage temperature range | Tstg | 55 | 150 | C | ||
| Microwave Characteristics (Ta = 25C) | ||||||
| Transition frequency | fT | VCE=5 V, IC=30 mA | 8 | 10 | GHz | |
| Insertion gain | |S21e|(1) | VCE=5 V, IC=30 mA, f=500 MHz | 18 | dB | ||
| Insertion gain | |S21e|(2) | VCE=5 V, IC=30 mA, f=1 GHz | 10.5 | 12.5 | dB | |
| Noise figure | NF(1) | VCE=5 V, IC=30 mA, f=500 MHz | 0.6 | dB | ||
| Noise figure | NF(2) | VCE=5 V, IC=30 mA, f=1 GHz | 0.85 | 1.15 | dB | |
| 3rd order intermodulation distortion output intercept point | OIP3 | VCE=5 V, IC=30 mA, f=500 MHz, f=1 MHz | 32 | dBmW | ||
| Electrical Characteristics (Ta = 25C) | ||||||
| Collector cut-off current | ICBO | VCB=5 V, IE=0 A | 0.1 | A | ||
| DC current gain | hFE | VCE=5 V, IC=30 mA | 200 | 400 | ||
| Output capacitance | Cob | VCB=5 V, IE=0 A, f=1 MHz | 1.45 | pF | ||
| Reverse transfer capacitance | Cre | VCB=5 V, IE=0 A, f=1 MHz (Note 2) | 0.9 | 1.2 | pF | |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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