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Hefei Purple Horn E-Commerce Co., Ltd.

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China NPN transistor UTC 2SC3647G-R-AB3-R optimized for high voltage switching in
China NPN transistor UTC 2SC3647G-R-AB3-R optimized for high voltage switching in

  1. China NPN transistor UTC 2SC3647G-R-AB3-R optimized for high voltage switching in

NPN transistor UTC 2SC3647G-R-AB3-R optimized for high voltage switching in

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Description SOT-89 Single Bipolar Transistors RoHS
Mfr. Part # 2SC3647G-R-AB3-R
Package SOT-89
Model Number 2SC3647G-R-AB3-R

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  1. Product Details
  2. Company Details

Product Specification

Description SOT-89 Single Bipolar Transistors RoHS Mfr. Part # 2SC3647G-R-AB3-R
Package SOT-89 Model Number 2SC3647G-R-AB3-R

Product Overview

The UNISONIC TECHNOLOGIES CO.,LTD 2SC3647 is an NPN silicon transistor designed for high-voltage switching applications. It features high breakdown voltage, large current capacity, and fast switching times, making it suitable for high-density, small-sized hybrid ICs.

Product Attributes

  • Brand: UNISONIC TECHNOLOGIES CO.,LTD
  • Model: 2SC3647
  • Material: Silicon
  • Package: SOT-89

Technical Specifications

Parameter Symbol Rating Unit Test Conditions
Collector to Base Voltage VCBO 120 V
Collector to Emitter Voltage VCEO 100 V
Emitter to Base Voltage VEBO 6 V
Collector Current IC 2 A
Collector Current (Pulse) ICP 3 A
Collector Dissipation PC 500 mW
Junction Temperature TJ 150 C
Storage Temperature TSTG -40 ~ +150 C
Collector-Base Breakdown Voltage BVCBO 120 V IC = 10A, IE =0
Collector-Emitter Breakdown Voltage BVCEO 100 V IC = 1mA, RBE =
Emitter-Base Breakdown Voltage BVEBO 6 V IE = 10A, IC=0
Collector Cutoff Current ICBO 100 nA VCB = 100V, IE =0
Emitter Cutoff Current IEBO 100 nA VEB = 4V, IC =0
Collector-Emitter Saturation Voltage VCE(SAT) 0.13 ~ 0.4 V IC = 1A, IB = 100mA
Base-Emitter Saturation Voltage VBE(SAT) 0.85 ~ 1.2 V IC = 1A, IB = 100mA
Output Capacitance Cob 16 pF VCB = 10V, f =1MHz
DC Current Gain hFE 100 ~ 400 VCE = 5V, IC = 100mA
Turn-ON Time tON 80 ns See specified Test Circuit.
Storage Time tSTG 1000 ns See specified Test Circuit.
Fall Time tF 50 ns See specified Test Circuit.
Gain-Bandwidth Product fT 120 MHz VCE = 10V, IC = 100mA

2212091108_UTC-2SC3647G-R-AB3-R_C5310374.pdf

Company Details

Bronze Gleitlager

,

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 and 

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 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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