Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 7V |
| Current - Collector Cutoff | 100nA |
| DC Current Gain | 400@0.3A,2V |
| type | NPN |
| Vce Saturation(VCE(sat)) | 140mV |
| Pd - Power Dissipation | 1W |
| Current - Collector(Ic) | 3A |
| Collector - Emitter Voltage VCEO | 50V |
| Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 50V 3A 1W Surface Mount SOT-89 |
| Mfr. Part # | 2SC5712(TE12L,F) |
| Package | SOT-89 |
| Model Number | 2SC5712(TE12L,F) |
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Product Specification
| Emitter-Base Voltage(Vebo) | 7V | Current - Collector Cutoff | 100nA |
| DC Current Gain | 400@0.3A,2V | type | NPN |
| Vce Saturation(VCE(sat)) | 140mV | Pd - Power Dissipation | 1W |
| Current - Collector(Ic) | 3A | Collector - Emitter Voltage VCEO | 50V |
| Operating Temperature | -55℃~+150℃ | Description | Bipolar (BJT) Transistor NPN 50V 3A 1W Surface Mount SOT-89 |
| Mfr. Part # | 2SC5712(TE12L,F) | Package | SOT-89 |
| Model Number | 2SC5712(TE12L,F) |
The TOSHIBA 2SC5712 is a silicon NPN epitaxial transistor designed for high-speed switching applications. It is suitable for use in DC-DC converters and DC-AC converters. Key features include high DC current gain, low collector-emitter saturation voltage, and fast switching speeds.
| Characteristics | Symbol | Test Condition | Min | Typ. | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25C) | ||||||
| Collector-base voltage | VCBO | 100 | V | |||
| Collector-emitter voltage | VCEX | 80 | V | |||
| Collector-emitter voltage | VCEO | 50 | V | |||
| Emitter-base voltage | VEBO | 7 | V | |||
| Collector current | IC (DC) | 3.0 | A | |||
| Collector current | ICP (Pulse) | 5.0 | A | |||
| Base current | IB (DC) | 0.3 | A | |||
| Collector power dissipation | PC (DC) | t = 10 s | 2.5 | W | ||
| Junction temperature | Tj | 150 | C | |||
| Storage temperature range | Tstg | 55 | 150 | C | ||
| Electrical Characteristics (Ta = 25C) | ||||||
| Collector cut-off current | ICBO | VCB = 100 V, IE = 0 | 100 | nA | ||
| Emitter cut-off current | IEBO | VEB = 7 V, IC = 0 | 100 | nA | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC = 10 mA, IB = 0 | 50 | V | ||
| DC current gain | hFE (1) | VCE = 2 V, IC = 0.3 A | 400 | 1000 | ||
| DC current gain | hFE (2) | VCE = 2 V, IC = 1 A | 200 | |||
| Collector-emitter saturation voltage | VCE(sat) | IC = 1 A, IB = 20 mA | 0.14 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC = 1 A, IB = 20 mA | 1.10 | V | ||
| Collector output capacitance | Cob | VCB = 10 V, IE = 0, f = 1 MHz | 13 | pF | ||
| Rise time | tr | See Figure 1 circuit diagram. VCC 30 V, RL = 30 IB1 = IB2 = 33.3 mA | 40 | ns | ||
| Storage time | tstg | See Figure 1 circuit diagram. VCC 30 V, RL = 30 IB1 = IB2 = 33.3 mA | 500 | ns | ||
| Fall time | tf | See Figure 1 circuit diagram. VCC 30 V, RL = 30 IB1 = IB2 = 33.3 mA | 120 | ns | ||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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