Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 150nA |
| Pd - Power Dissipation | 225mW |
| type | PNP |
| Current - Collector(Ic) | 1.5A |
| Collector - Emitter Voltage VCEO | 25V |
| Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor PNP 25V 1500mA 225mW Surface Mount SOT-23 |
| Mfr. Part # | S-L8550HQLT1G |
| Package | SOT-23 |
| Model Number | S-L8550HQLT1G |
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Product Specification
| Emitter-Base Voltage(Vebo) | 5V | Current - Collector Cutoff | 150nA |
| Pd - Power Dissipation | 225mW | type | PNP |
| Current - Collector(Ic) | 1.5A | Collector - Emitter Voltage VCEO | 25V |
| Operating Temperature | -55℃~+150℃ | Description | Bipolar (BJT) Transistor PNP 25V 1500mA 225mW Surface Mount SOT-23 |
| Mfr. Part # | S-L8550HQLT1G | Package | SOT-23 |
| Model Number | S-L8550HQLT1G |
The L8550HQLT1G and S-L8550HQLT1G are general-purpose PNP silicon transistors designed for automotive and other applications requiring unique site and control change requirements. The S-prefix variant is AEC-Q101 qualified and PPAP capable. These transistors offer high current capacity in a compact SOT23 package and are manufactured with materials compliant with RoHS requirements and Halogen Free.
| Parameter | Symbol | L8550HQLT1G / S-L8550HQLT1G | Unit | Notes |
|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | -25 | V | |
| Collector-Base Voltage | VCBO | -40 | V | |
| Emitter-Base Voltage | VEBO | -5 | V | |
| Collector Current | IC | -1500 | mA | |
| Total Device Dissipation (FR-5 Board) | PD | 300 | mW | @ TA = 25C |
| Derate above 25C (FR-5 Board) | 2.4 | mW/|||
| Thermal Resistance, Junction-to-Ambient (FR-5 Board) | RJA | 417 | /W | |
| Total Device Dissipation (Alumina Substrate) | PD | 225 | mW | @ TA = 25C |
| Derate above 25C (Alumina Substrate) | 1.8 | mW/|||
| Thermal Resistance, Junction-to-Ambient (Alumina Substrate) | RJA | 556 | /W | |
| Junction and Storage Temperature | TJ, Tstg | -55 ~ +150 | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -25 | V | @ IC = -1.0mA |
| Emitter-Base Breakdown Voltage | V(BR)EBO | -5 | V | @ IE = -100A |
| Collector-Base Breakdown voltage | V(BR)CBO | -40 | V | @ IC = -100A |
| Collector Cutoff Current | ICBO | -150 | nA@ VCB = -35 V | |
| Emitter Cutoff Current | IEBO | -40 | nA@ VEB = -4V | |
| DC Current Gain | HFE | 150 - 300 | @ IC = -100mA, VCE = -1V | |
| Collector-Emitter Saturation Voltage | VCE(S) | -0.5 | V | @ IC = -800mA, IB = -80mA |
| Collector-Emitter cutoff Current | ICEO | -10 | A | @ VCE = -25V, IB = 0 |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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