| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 150nA |
| Pd - Power Dissipation | 225mW |
| type | NPN |
| Current - Collector(Ic) | 800mA |
| Collector - Emitter Voltage VCEO | 25V |
| Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 25V 800mA 225mW Surface Mount SOT-23 |
| Mfr. Part # | L8050PLT1G |
| Package | SOT-23 |
| Model Number | L8050PLT1G |
View Detail Information
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Product Specification
| Emitter-Base Voltage(Vebo) | 5V | Current - Collector Cutoff | 150nA |
| Pd - Power Dissipation | 225mW | type | NPN |
| Current - Collector(Ic) | 800mA | Collector - Emitter Voltage VCEO | 25V |
| Operating Temperature | -55℃~+150℃ | Description | Bipolar (BJT) Transistor NPN 25V 800mA 225mW Surface Mount SOT-23 |
| Mfr. Part # | L8050PLT1G | Package | SOT-23 |
| Model Number | L8050PLT1G |
The L8050 is an NPN silicon general-purpose transistor from LESHAN RADIO COMPANY, LTD., designed for high current capacity in a compact SOT-23 package. It features an epitaxial planar type construction and offers an NPN complement, the L8050. A Pb-Free package option is available.
| Characteristic | Symbol | Min | Typ | Max | Unit | Notes |
| Collector-Emitter Voltage | VCEO | 25 | V | |||
| Collector-Base Voltage | VCBO | 40 | V | |||
| Emitter-Base Voltage | VEBO | 5 | V | |||
| Collector Current-Continuous | IC | 800 | mAdc | |||
| Total Device Dissipation (FR-5 Board) | PD | 225 | mW | TA=25C, Derate above 25C: 1.8 mW/C | ||
| Thermal Resistance (Junction to Ambient, FR-5 Board) | RJ A | 556 | C/W | |||
| Total Device Dissipation (Alumina Substrate) | PD | 300 | mW | TA=25C, Derate above 25C: 2.4 mW/C | ||
| Thermal Resistance (Junction to Ambient, Alumina Substrate) | RJ A | 417 | C/W | |||
| Junction and Storage Temperature | Tj,Tstg | -55 | +150 | C | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 25 | V | IC=1.0mA | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | 5 | V | IE=100 | ||
| Collector-Base Breakdown Voltage | V(BR)CBO | 40 | V | IC=100 | ||
| Collector Cutoff Current | ICBO | 150 | nA | VCB=35V | ||
| Emitter Cutoff Current | IEBO | 150 | nA | VEB=4V | ||
| DC Current Gain | hFE | 100 | 600 | IC=100mA,VCE=1V (hFE ranges: P:100~200, Q:150~300, R:200-400, S:300-600) | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.5 | V | IC=800mA, IB=80mA |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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