| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 200nA |
| Pd - Power Dissipation | 1.75W |
| type | PNP |
| Current - Collector(Ic) | 8A |
| Collector - Emitter Voltage VCEO | 80V |
| Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor PNP 80V 8A 1.75W Surface Mount TO-252 |
| Mfr. Part # | LBTP880DPTUG |
| Package | TO-252 |
| Model Number | LBTP880DPTUG |
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Product Specification
| Emitter-Base Voltage(Vebo) | 5V | Current - Collector Cutoff | 200nA |
| Pd - Power Dissipation | 1.75W | type | PNP |
| Current - Collector(Ic) | 8A | Collector - Emitter Voltage VCEO | 80V |
| Operating Temperature | -55℃~+150℃ | Description | Bipolar (BJT) Transistor PNP 80V 8A 1.75W Surface Mount TO-252 |
| Mfr. Part # | LBTP880DPTUG | Package | TO-252 |
| Model Number | LBTP880DPTUG |
The LBTP880DPTUG and S-LBTP880DPTUG are PNP Power transistors designed for surface mount applications. They feature lead forming for plastic sleeves and are compliant with RoHS requirements and Halogen Free. The S- prefix indicates suitability for automotive and other applications requiring unique site and control change requirements, with AEC-Q101 qualification and PPAP capability.
| Parameter | Symbol | Limits | Unit | Notes |
| CollectorEmitter Voltage | VCEO | -80 | V | |
| CollectorBase Voltage | VCBO | -80 | V | |
| EmitterBase Voltage | VEBO | -5 | V | |
| Collector Current (DC) | IC | -8 | A | |
| Peak Collector Current (tp < 5 ms) | ICM | -16 | A | |
| Total Power Dissipation @ TA = 25C | PD | 1.75 | W | (Note 1) |
| Derate above 25C | 0.16 | W/ | ||
| Total Power Dissipation @ TC = 25C | PD | 20 | W | (Note 2) |
| Derate above 25C | 0.014 | W/ | ||
| Thermal Resistance, JunctiontoAmbient | RJA | 71.4 | C/W | (Note 1) |
| Thermal Resistance, JunctiontoCase | RJC | 6.25 | C/W | (Note 2) |
| Junction Temperature | Tj | 150 | ||
| Storage Temperature Range | Tstg | -55~+150 | ||
| CollectorEmitter Breakdown Voltage (IC = -1 mA, IB = 0) | VBR(CEO) | -80 | V | |
| CollectorBase Breakdown Voltage (IC = -100A, IE = 0) | VBR(CBO) | -80 | V | |
| EmitterBase Breakdown Voltage (IE = -100A, IC = 0) | VBR(EBO) | -5 | V | |
| CollectorBase Cutoff Current (VCB=-80V,IE=0 ) | ICBO | -1 | A | |
| EmitterBase CutOff Current (VEB=-5V,IC=0) | IEBO | -200 | nA | |
| Collector-Emitter Cutoff Current (VCE=-80V,IB=0) | ICEO | -200 | nA | |
| DC Current Gain (VCE =-1V,IC =-2A) | HFE | 60 - 200 | ||
| DC Current Gain (VCE =-1V,IC =-4A) | HFE | 40 - | ||
| CollectorEmitter Saturation Voltage (IC =-8A,IB =-400mA) | VCE(sat) | -1.5 | V | |
| Base-Emitter Saturation Voltage (IC =-8A, IB =-800 mA) | VBE(sat) | - | V | |
| Delay Time | td | 43 | ns | (VCC=-15V,VBE=2V, IC=-1A,IB1=-0.1A) (Note 3) |
| Rise Time | tr | 85 | ns | (VCC=-15V,IC=-1A, IB1=IB2=-0.1A) (Note 3) |
| Storage Time | ts | 1500 | ns | (Note 3) |
| Fall Time | tf | 117 | ns | (Note 3) |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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