| Emitter-Base Voltage(Vebo) | 6V |
| Current - Collector Cutoff | 50nA |
| Pd - Power Dissipation | 150mW |
| Transition frequency(fT) | 300MHz |
| type | NPN |
| Number | 2 NPN |
| Current - Collector(Ic) | 200mA |
| Collector - Emitter Voltage VCEO | 40V |
| Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 150mW SC-88 |
| Mfr. Part # | LMBT3904DW1T1G |
| Package | SC-88 |
| Model Number | LMBT3904DW1T1G |
View Detail Information
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Product Specification
| Emitter-Base Voltage(Vebo) | 6V | Current - Collector Cutoff | 50nA |
| Pd - Power Dissipation | 150mW | Transition frequency(fT) | 300MHz |
| type | NPN | Number | 2 NPN |
| Current - Collector(Ic) | 200mA | Collector - Emitter Voltage VCEO | 40V |
| Operating Temperature | -55℃~+150℃ | Description | Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 150mW SC-88 |
| Mfr. Part # | LMBT3904DW1T1G | Package | SC-88 |
| Model Number | LMBT3904DW1T1G |
The LMBT3904DW1T1G and S-LMBT3904DW1T1G are NPN silicon general-purpose transistors designed for automotive and other applications requiring unique site and control change requirements. The 'S-' prefix variant is AEC-Q101 qualified and PPAP capable. These transistors offer low VCE(sat) ( 0.4 V), simplifying circuit design, reducing board space, and decreasing component count. They are available in 8 mm, 7-inch tape and reel packaging.
| Parameter | Symbol | LMBT3904DW1T1G Min. | LMBT3904DW1T1G Typ. | LMBT3904DW1T1G Max. | S-LMBT3904DW1T1G Min. | S-LMBT3904DW1T1G Typ. | S-LMBT3904DW1T1G Max. | Unit |
| MAXIMUM RATINGS | ||||||||
| CollectorEmitter Voltage | VCEO | 40 | Vdc | |||||
| CollectorBase Voltage | VCBO | 60 | Vdc | |||||
| EmitterBase Voltage | VEBO | 6 | Vdc | |||||
| Collector Current Continuous | IC | 200 | mAdc | |||||
| THERMAL CHARACTERISTICS | ||||||||
| Total Device Dissipation, FR5 Board | PD | 833 | mW | |||||
| Derate above 25C | 1.2 | mW/C | ||||||
| Thermal Resistance, JunctiontoAmbient | RJA | 150 | C/W | |||||
| Junction and Storage temperature | TJ,Tstg | -55 | +150 | -55 | +150 | C | ||
| ELECTRICAL CHARACTERISTICS (Ta= 25C) | ||||||||
| CollectorEmitter Breakdown Voltage | VBR(CEO) | 40 | 40 | V | ||||
| CollectorBase Breakdown Voltage | VBR(CBO) | 60 | 60 | V | ||||
| EmitterBase Breakdown Voltage | VBR(EBO) | 6 | 6 | V | ||||
| Collector Cutoff Current | ICEX | 50 | nA | |||||
| Base Cutoff Current | IBL | 50 | nA | |||||
| DC Current Gain | HFE | 100 | 300 | 100 | 300 | |||
| CollectorEmitter Saturation Voltage | VCE(sat) | 0.2 | 0.4 | 0.2 | 0.4 | V | ||
| BaseEmitter Saturation Voltage | VBE(sat) | 0.65 | 0.85 | 0.65 | 0.85 | V | ||
| CurrentGain Bandwidth Product | fT | 300 | 300 | MHz | ||||
| Output Capacitance | Cobo | 8 | 8 | pF | ||||
| Input Capacitance | Cibo | 8 | 8 | pF | ||||
| SWITCHING CHARACTERISTICS | ||||||||
| Delay Time | td | 35 | 35 | ns | ||||
| Rise Time | tr | 35 | 35 | ns | ||||
| Storage Time | ts | 200 | 200 | ns | ||||
| Fall Time | tf | 50 | 50 | ns | ||||
| DEVICE MARKING AND ORDERING INFORMATION | ||||||||
| Part Number | LMBT3904DW1T1G | S-LMBT3904DW1T1G | ||||||
| Device Marking | MA | MA | ||||||
| Shipping | 3000/Tape&Reel | 10000/Tape&Reel | ||||||
| Package | SC88(SOT-363) | SC88(SOT-363) | ||||||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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