Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 50nA |
| Pd - Power Dissipation | 225mW |
| Transition frequency(fT) | 250MHz |
| type | PNP |
| Number | 1 PNP |
| Current - Collector(Ic) | 200mA |
| Collector - Emitter Voltage VCEO | 40V |
| Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor PNP 40V 200mA 250MHz 225mW Surface Mount SOT-23 |
| Mfr. Part # | S-LMBT3906LT1G |
| Package | SOT-23 |
| Model Number | S-LMBT3906LT1G |
View Detail Information
Explore similar products
General Purpose Power Amplification Transistor BLUE ROCKET NJW0302GC Silicon PNP
NPN Transistor CBI MMBT3904 SOT23 Package Epitaxial Planar Die Construction for
NPN Bipolar Transistor Guangdong Hottech 2SC1623 L5 with 200mW Power Dissipation
Jilin Sino Microelectronics 3DD13003A 126 NPN transistor for high frequency
Product Specification
| Emitter-Base Voltage(Vebo) | 5V | Current - Collector Cutoff | 50nA |
| Pd - Power Dissipation | 225mW | Transition frequency(fT) | 250MHz |
| type | PNP | Number | 1 PNP |
| Current - Collector(Ic) | 200mA | Collector - Emitter Voltage VCEO | 40V |
| Operating Temperature | -55℃~+150℃ | Description | Bipolar (BJT) Transistor PNP 40V 200mA 250MHz 225mW Surface Mount SOT-23 |
| Mfr. Part # | S-LMBT3906LT1G | Package | SOT-23 |
| Model Number | S-LMBT3906LT1G |
The LMBT3906LT1G and S-LMBT3906LT1G are NPN Silicon General Purpose Transistors designed for automotive and other applications requiring unique site and control change requirements. The S-prefix variant is AEC-Q101 qualified and PPAP capable. These transistors comply with RoHS requirements and are Halogen Free.
| Parameter | Symbol | LMBT3906LT1G | S-LMBT3906LT1G | Unit | Notes | |
| MAXIMUM RATINGS | ||||||
| CollectorEmitter Voltage | VCEO | -40 | -40 | Vdc | ||
| CollectorBase Voltage | VCBO | -40 | -40 | Vdc | ||
| EmitterBase Voltage | VEBO | -5 | -5 | Vdc | ||
| Collector Current Continuous | IC | -200 | -200 | mAdc | ||
| Total Device Dissipation, FR5 Board | PD | 225 | 225 | mW | @ TA = 25C | |
| Derate above 25C | 1.8 | 1.8 | mW/C | |||
| Thermal Resistance, JunctiontoAmbient | RJA | 556 | 556 | C/W | ||
| Junction and Storage temperature | TJ,Tstg | -55+150 | -55+150 | C | ||
| OFF CHARACTERISTICS | ||||||
| CollectorEmitter Breakdown Voltage | VBR(CEO) | -40 | -40 | V | (IC = -1.0 mAdc, IB = 0) | |
| CollectorBase Breakdown Voltage | VBR(CBO) | -40 | -40 | V | (IC = -10 Adc, IE = 0) | |
| EmitterBase Breakdown Voltage | VBR(EBO) | -5 | -5 | V | (IE = -10 Adc, IC = 0) | |
| Collector Cutoff Current | ICEX | nA | ( VCE = -30 Vdc, VEB = -3.0Vdc) | |||
| Base Cutoff Current | IBL | nA | (VCE = -30 Vdc, VEB = -3.0Vdc) | |||
| ON CHARACTERISTICS | ||||||
| DC Current Gain | HFE | 60 - 300 | 60 - 300 | (IC = -0.1 mAdc, VCE = -1.0 Vdc) | ||
| 60 - 100 | 60 - 100 | (IC = -1.0 mAdc, VCE = -1.0 Vdc) | ||||
| 30 - 60 | 30 - 60 | (IC = -10 mAdc, VCE = -1.0 Vdc) | ||||
| (IC = -50 mAdc, VCE = -1.0 Vdc) | ||||||
| (IC = -100 mAdc, VCE = -1.0 Vdc) | ||||||
| CollectorEmitter Saturation Voltage | VCE(sat) | -0.25 (Typ) | -0.25 (Typ) | V | (IC = -10 mAdc, IB = -1.0 mAdc) | |
| -0.4 (Typ) | -0.4 (Typ) | V | (IC = -50 mAdc, IB = -5.0 mAdc) | |||
| BaseEmitter Saturation Voltage | VBE(sat) | -0.65 (Typ) | -0.65 (Typ) | V | (IC = -10 mAdc, IB = -1.0 mAdc) | |
| -0.85 (Typ) | -0.85 (Typ) | V | (IC = -50 mAdc, IB = -5.0 mAdc) | |||
| SMALLSIGNAL CHARACTERISTICS | ||||||
| CurrentGain Bandwidth Product | fT | 250 | 250 | MHz | (IC = -10mAdc, VCE= -20Vdc, f = 100MHz) | |
| Output Capacitance | Cobo | 4.5 (Typ) | 4.5 (Typ) | pF | (VCB = -5.0 Vdc, IE = 0, f = 1.0 MHz) | |
| Input Capacitance | Cibo | 10 (Typ) | 10 (Typ) | pF | (VEB = -0.5 Vdc, IC = 0, f = 1.0 MHz) | |
| SWITCHING CHARACTERISTICS | ||||||
| Delay Time | td | 35 (Typ) | 35 (Typ) | ns | (VCC = -3.0 Vdc,VBE=0.5Vdc, IC = -10mAdc, IB1 = -1.0 mAdc) | |
| Rise Time | tr | 35 (Typ) | 35 (Typ) | ns | (VCC = -3.0 Vdc,VBE=0.5Vdc, IC = -10mAdc, IB1 = -1.0 mAdc) | |
| Storage Time | ts | 225 (Typ) | 225 (Typ) | ns | (VCC = -3.0 Vdc, IC = -10 mAdc,IB1 = IB2 = -1.0 mAdc) | |
| Fall Time | tf | 75 (Typ) | 75 (Typ) | ns | (VCC = -3.0 Vdc, IC = -10 mAdc,IB1 = IB2 = -1.0 mAdc) | |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
.gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c... .gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c...
Get in touch with us
Leave a Message, we will call you back quickly!