| Emitter-Base Voltage(Vebo) | 7V |
| Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 200mW |
| Transition frequency(fT) | 180MHz |
| type | NPN |
| Number | 1 NPN |
| Current - Collector(Ic) | 150mA |
| Collector - Emitter Voltage VCEO | 50V |
| Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 50V 150mA 180MHz 0.2W Surface Mount SOT-23 |
| Mfr. Part # | L2SC2412KRLT1G |
| Package | SOT-23 |
| Model Number | L2SC2412KRLT1G |
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Product Specification
| Emitter-Base Voltage(Vebo) | 7V | Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 200mW | Transition frequency(fT) | 180MHz |
| type | NPN | Number | 1 NPN |
| Current - Collector(Ic) | 150mA | Collector - Emitter Voltage VCEO | 50V |
| Operating Temperature | -55℃~+150℃ | Description | Bipolar (BJT) Transistor NPN 50V 150mA 180MHz 0.2W Surface Mount SOT-23 |
| Mfr. Part # | L2SC2412KRLT1G | Package | SOT-23 |
| Model Number | L2SC2412KRLT1G |
LESHAN RADIO COMPANY, LTD. offers NPN Silicon General Purpose Transistors in a SOT-23 package. These transistors are designed for various electronic applications requiring reliable switching and amplification.
| Model | Collector-Emitter Voltage (VCEO) | Collector Current (IC) Continuous | Collector Power Dissipation (PC) | DC Current Transfer Ratio (hFE) | Transition Frequency (fT) | Output Capacitance (Cob) | Device Marking | Shipping |
| L2SC2412KQLT1G | 50 V | 150 mAdc | 0.2 W | 120 560 | 180 MHz | 2.0 3.5 pF | BQ | 3000 Tape & Reel |
| L2SC2412KRLT1G | 50 V | 150 mAdc | 0.2 W | 180 390 | 180 MHz | 2.0 3.5 pF | BR | 10000 Tape & Reel |
| L2SC2412KSLT1G | 50 V | 150 mAdc | 0.2 W | 270 560 | 180 MHz | 2.0 3.5 pF | G1F | 3000 Tape & Reel |
| S-L2SC2412KQLT1G | 50 V | 150 mAdc | 0.2 W | 120 560 | 180 MHz | 2.0 3.5 pF | BQ | 10000 Tape & Reel |
| S-L2SC2412KRLT1G | 50 V | 150 mAdc | 0.2 W | 180 390 | 180 MHz | 2.0 3.5 pF | BR | 3000 Tape & Reel |
| S-L2SC2412KSLT1G | 50 V | 150 mAdc | 0.2 W | 270 560 | 180 MHz | 2.0 3.5 pF | G1F | 10000 Tape & Reel |
| Characteristic | Symbol | Min | Typ | Max | Unit | Condition |
| CollectorEmitter Breakdown Voltage | V (BR)CEO | 50 | V | IC = 1 mA | ||
| EmitterBase Breakdown Voltage | V (BR)EBO | 7 | V | IE= 50 A | ||
| CollectorBase Breakdown Voltage | V (BR)CBO | 60 | V | IC = 50 A | ||
| Collector Cutoff Current | ICBO | 0.1 | A | VCB = 60 V | ||
| Emitter cutoff current | IEBO | 0.1 | A | VEB = 7 V | ||
| Collector-emitter saturation voltage | V CE(sat) | 0.4 | V | IC/ IB = 50 mA / 5mA | ||
| DC current transfer ratio | h FE | 120 | 560 | V CE = 6 V, IC= 1mA | ||
| Transition frequency | f T | 180 | MHz | V CE = 12 V, IE= 2mA, f =30MHz | ||
| Output capacitance | Cob | 2.0 | 3.5 | pF | V CB = 12 V, IE= 0A, f =1MHz |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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