Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 6V |
| Current - Collector Cutoff | 50nA |
| Pd - Power Dissipation | 300mW |
| Transition frequency(fT) | - |
| type | NPN |
| Current - Collector(Ic) | 600mA |
| Collector - Emitter Voltage VCEO | 160V |
| Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 160V 600mA 300mW Surface Mount SOT-23 |
| Mfr. Part # | S-LMBT5551LT1G |
| Package | SOT-23 |
| Model Number | S-LMBT5551LT1G |
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Product Specification
| Emitter-Base Voltage(Vebo) | 6V | Current - Collector Cutoff | 50nA |
| Pd - Power Dissipation | 300mW | Transition frequency(fT) | - |
| type | NPN | Current - Collector(Ic) | 600mA |
| Collector - Emitter Voltage VCEO | 160V | Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 160V 600mA 300mW Surface Mount SOT-23 | Mfr. Part # | S-LMBT5551LT1G |
| Package | SOT-23 | Model Number | S-LMBT5551LT1G |
The LMBT5551LT1G and S-LMBT5551LT1G are high voltage transistors designed for automotive and other applications requiring unique site and control change requirements. The S- prefix variant is AEC-Q101 qualified and PPAP capable. These transistors comply with RoHS requirements and are Halogen Free.
| Parameter | Symbol | Limits | Unit | Notes |
| MAXIMUM RATINGS (Ta = 25C) | ||||
| Collector current--Continuous | IC | 180 | mA | |
| Collector-Emitter Voltage | VCEO | 160 | V | |
| Collector-Base voltage | VCBO | 180 | V | |
| Emitter-Base Voltage | VEBO | 6.0 | V | |
| Total Device Dissipation, FR5 Board | PD | 225 | mW | @ TA = 25C; Derate above 25C: 1.8 mW/ |
| Thermal Resistance, JunctiontoAmbient (FR-5 Board) | RJA | 417 | /W | FR5 = 1.00.750.062 in. |
| Total Device Dissipation, Alumina Substrate | PD | 556 | mW | @ TA = 25C; Derate above 25C: 2.4 mW/ |
| Thermal Resistance, JunctiontoAmbient (Alumina Substrate) | RJA | 1.8 | /W | Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. |
| Junction and Storage temperature | TJ,Tstg | 55+150 | ||
| ELECTRICAL CHARACTERISTICS (Ta= 25C) | ||||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 160 | V | (IC = 1.0 mA, IB = 0) |
| Collector-Base Breakdown voltage | V(BR)CBO | 180 | V | (IC = 100A, IE = 0) |
| Emitter-Base Breakdown Voltage | V(BR)EBO | 6.0 | V | (IE = 10 A, IC = 0) |
| Collector Cutoff Current | ICBO | 50 | nA | (VCB = 120 V, IE = 0) |
| Collector Cutoff Current @ 100C | ICBO | 100 | nA | (VCB = 120 V, IE = 0, TA = 100C) |
| Emitter Cutoff Current | IEBO | 50 | nA | (VEB = 4.0 V, IC = 0) |
| Collector Emitter Cut-off Current | ICES | 100 | nA | (VCB = 120 V) |
| DC Current Gain | HFE | 80-250 | (IC = 1.0 mA, VCE = 5.0 V) | |
| DC Current Gain | HFE | 100-300 | (IC = 10 mA, VCE = 5.0 V) | |
| DC Current Gain | HFE | 80-150 | (IC = 50 mA, VCE = 5.0 V) | |
| Collector-Emitter Saturation Voltage | VCE(S) | 0.2 | V | (IC = 10 mA, IB = 1.0 mA) |
| Collector-Emitter Saturation Voltage | VCE(S) | 0.15 | V | (IC = 50 mA, IB = 5.0 mA) |
| Base-Emitter Saturation Voltage | VBE(S) | 1.0 | V | (IC = 10 mA, IB = 1.0 mA) |
| Base-Emitter Saturation Voltage | VBE(S) | 1.1 | V | (IC = 50 mA, IB = 5.0 mA) |
| DEVICE MARKING AND ORDERING INFORMATION | ||||
| Part Number | Marking | Package | Quantity | Notes |
| LMBT5551LT1G | G1 | SOT23 | 3000/Tape&Reel | |
| LMBT5551LT3G | G1 | SOT23 | 10000/Tape&Reel | |
| S-LMBT5551LT1G | S-LMBT5551LT1G | SOT23 | 3000/Tape&Reel | AEC-Q101 qualified and PPAP capable. |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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