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Hefei Purple Horn E-Commerce Co., Ltd.

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China NPN Silicon Transistor LRC LBC847AWT1G Designed for Electronic Amplification and
China NPN Silicon Transistor LRC LBC847AWT1G Designed for Electronic Amplification and

  1. China NPN Silicon Transistor LRC LBC847AWT1G Designed for Electronic Amplification and

NPN Silicon Transistor LRC LBC847AWT1G Designed for Electronic Amplification and

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Emitter-Base Voltage(Vebo) 6V
Current - Collector Cutoff 5uA
Pd - Power Dissipation 150mW
Transition frequency(fT) 100MHz
type NPN
Current - Collector(Ic) 100mA
Collector - Emitter Voltage VCEO 45V
Operating Temperature -55℃~+150℃
Description Bipolar (BJT) Transistor NPN 45V 100mA 100MHz 150mW Surface Mount SC-70
Mfr. Part # LBC847AWT1G
Package SC-70
Model Number LBC847AWT1G

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Product Specification

Emitter-Base Voltage(Vebo) 6V Current - Collector Cutoff 5uA
Pd - Power Dissipation 150mW Transition frequency(fT) 100MHz
type NPN Current - Collector(Ic) 100mA
Collector - Emitter Voltage VCEO 45V Operating Temperature -55℃~+150℃
Description Bipolar (BJT) Transistor NPN 45V 100mA 100MHz 150mW Surface Mount SC-70 Mfr. Part # LBC847AWT1G
Package SC-70 Model Number LBC847AWT1G

LESHAN RADIO COMPANY, LTD. - General Purpose NPN Silicon Transistors

This document details the specifications for LESHAN RADIO COMPANY, LTD.'s general-purpose NPN silicon transistors, including the BC846, BC847, and BC848 series. These transistors are designed for a wide range of electronic applications requiring reliable amplification and switching capabilities.

Product Attributes

  • Brand: LESHAN RADIO COMPANY, LTD.
  • Material: Silicon
  • Certifications: RoHS compliant, AEC-Q101 Qualified and PPAP Capable (for 'S-' prefix devices)

Technical Specifications

ModelCollector-Emitter Voltage (V CEO)Collector-Base Voltage (V CBO)Emitter-Base Voltage (V EBO)Collector Current - Continuous (I C)Total Device Dissipation (P D)Thermal Resistance, Junction to Ambient (R JA)Junction and Storage Temperature (T J, T stg)Collector Cutoff Current (I CBO)DC Current Gain (hFE)Collector-Emitter Saturation Voltage (V CE(sat))Base-Emitter Saturation Voltage (V BE(sat))Base-Emitter Voltage (V BE(on))Current-Gain Bandwidth Product (f T)Output Capacitance (C obo)Noise Figure (NF)
BC84665 V80 V6.0 V100 mAdc150 mW833 C/W55 to +150 C15 nA (VCB = 30 V)110-180 (IC=2.0mA, VCE=5V)0.25 V (IC=10mA, IB=0.5mA)0.7 V (IC=10mA, IB=0.5mA)580-700 mV (IC=2.0mA, VCE=5V)100 MHz (IC=10mA, VCE=5V, f=100MHz)4.5 pF (VCB=10V, f=1.0MHz)4.0 dB (IC=0.2mA, VCE=5V, RS=2.0k, f=1.0kHz, BW=200Hz)
BC84745 V50 V6.0 V100 mAdc150 mW833 C/W55 to +150 C15 nA (VCB = 30 V)220-450 (IC=2.0mA, VCE=5V)0.25 V (IC=10mA, IB=0.5mA)0.7 V (IC=10mA, IB=0.5mA)660-770 mV (IC=2.0mA, VCE=5V)100 MHz (IC=10mA, VCE=5V, f=100MHz)4.5 pF (VCB=10V, f=1.0MHz)4.0 dB (IC=0.2mA, VCE=5V, RS=2.0k, f=1.0kHz, BW=200Hz)
BC84830 V30 V5.0 V100 mAdc150 mW833 C/W55 to +150 C15 nA (VCB = 30 V)420-800 (IC=2.0mA, VCE=5V)0.25 V (IC=10mA, IB=0.5mA)0.7 V (IC=10mA, IB=0.5mA)700 mV (IC=2.0mA, VCE=5V)100 MHz (IC=10mA, VCE=5V, f=100MHz)4.5 pF (VCB=10V, f=1.0MHz)4.0 dB (IC=0.2mA, VCE=5V, RS=2.0k, f=1.0kHz, BW=200Hz)
S-BC84665 V80 V6.0 V100 mAdc150 mW833 C/W55 to +150 C15 nA (VCB = 30 V)110-180 (IC=2.0mA, VCE=5V)0.25 V (IC=10mA, IB=0.5mA)0.7 V (IC=10mA, IB=0.5mA)580-700 mV (IC=2.0mA, VCE=5V)100 MHz (IC=10mA, VCE=5V, f=100MHz)4.5 pF (VCB=10V, f=1.0MHz)4.0 dB (IC=0.2mA, VCE=5V, RS=2.0k, f=1.0kHz, BW=200Hz)
S-BC84745 V50 V6.0 V100 mAdc150 mW833 C/W55 to +150 C15 nA (VCB = 30 V)220-450 (IC=2.0mA, VCE=5V)0.25 V (IC=10mA, IB=0.5mA)0.7 V (IC=10mA, IB=0.5mA)660-770 mV (IC=2.0mA, VCE=5V)100 MHz (IC=10mA, VCE=5V, f=100MHz)4.5 pF (VCB=10V, f=1.0MHz)4.0 dB (IC=0.2mA, VCE=5V, RS=2.0k, f=1.0kHz, BW=200Hz)
S-BC84830 V30 V5.0 V100 mAdc150 mW833 C/W55 to +150 C15 nA (VCB = 30 V)420-800 (IC=2.0mA, VCE=5V)0.25 V (IC=10mA, IB=0.5mA)0.7 V (IC=10mA, IB=0.5mA)700 mV (IC=2.0mA, VCE=5V)100 MHz (IC=10mA, VCE=5V, f=100MHz)4.5 pF (VCB=10V, f=1.0MHz)4.0 dB (IC=0.2mA, VCE=5V, RS=2.0k, f=1.0kHz, BW=200Hz)

Device Marking: LBC846AWT1G = 1A; LBC846BWT1G = 1B; LBC847AWT1G = 1E; LBC847BWT1G = 1F; LBC847CWT1G = 1G; LBC848AWT1G = 1J; LBC848BWT1G = 1K; LBC848CWT1G = 1L;

Ordering Information:

DevicePackageShipping
LBC846AWT1GSC-703000/Tape&Reel
LBC846AWT3GSC-7010000/Tape&Reel
S-LBC846AWT1GSC-703000/Tape&Reel
S-LBC846AWT3GSC-7010000/Tape&Reel

2202090930_LRC-LBC847AWT1G_C2972798.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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