| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 225mW |
| Transition frequency(fT) | - |
| type | NPN |
| Current - Collector(Ic) | 100mA |
| Collector - Emitter Voltage VCEO | 45V |
| Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 45V 100mA 225mW Surface Mount SOT-23 |
| Mfr. Part # | L9014RLT1G |
| Package | SOT-23 |
| Model Number | L9014RLT1G |
View Detail Information
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Product Specification
| Emitter-Base Voltage(Vebo) | 5V | Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 225mW | Transition frequency(fT) | - |
| type | NPN | Current - Collector(Ic) | 100mA |
| Collector - Emitter Voltage VCEO | 45V | Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 45V 100mA 225mW Surface Mount SOT-23 | Mfr. Part # | L9014RLT1G |
| Package | SOT-23 | Model Number | L9014RLT1G |
The L9014QLT1G is a general-purpose NPN silicon transistor from LESHAN RADIO COMPANY, LTD. It is complementary to the L9014. This transistor is suitable for various electronic applications requiring reliable performance.
| Symbol | Characteristic | Value | Unit | Notes | |
| VCEO | Collector-Emitter Voltage | 45 | V | ||
| VCBO | Collector-Base Voltage | 50 | V | ||
| VEBO | Emitter-Base Voltage | 5 | V | ||
| IC | Collector Current-Continuous | 100 | mA | ||
| PD | Total Device Dissipation (FR-5 Board) | 225 | mW | TA=25C, Derate above 25C: 1.8 mW/C | |
| PD | Total Device Dissipation (Alumina Substrate) | 300 | mW | TA=25C, Derate above 25C: 2.4 mW/C | |
| RJA | Thermal Resistance, Junction to Ambient (FR-5 Board) | 556 | C/W | ||
| RJA | Thermal Resistance, Junction to Ambient (Alumina Substrate) | 417 | C/W | ||
| TJ, Tstg | Junction and Storage Temperature | -55 to +150 | C | ||
| V(BR)CEO | Collector-Emitter Breakdown Voltage | 45 | V | IC=1.0mA | |
| V(BR)EBO | Emitter-Base Breakdown Voltage | 5 | V | IE=100A | |
| V(BR)CBO | Collector-Base Breakdown Voltage | 50 | V | IC=100A | |
| ICBO | Collector Cutoff Current | 100 | nA | VCB=40V | |
| IEBO | Emitter Cutoff Current | 100 | nA | VEB=3V | |
| HFE | DC Current Gain | 150 - 1000 | IC=1mA, VCE=5V | ||
| VCE(sat) | Collector-Emitter Saturation Voltage | - | 0.3 | V | IC=100mA, IB=5mA |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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