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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China Low Noise High Gain Transistor Slkor 2SC4226 R24 NPN Silicon Epitaxial Planar
China Low Noise High Gain Transistor Slkor 2SC4226 R24 NPN Silicon Epitaxial Planar

  1. China Low Noise High Gain Transistor Slkor 2SC4226 R24 NPN Silicon Epitaxial Planar

Low Noise High Gain Transistor Slkor 2SC4226 R24 NPN Silicon Epitaxial Planar

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Emitter-Base Voltage(Vebo) 3V
Current - Collector Cutoff 1uA
DC Current Gain 70@7mA,3V
Transition frequency(fT) 4.5GHz
Vce Saturation(VCE(sat)) -
type NPN
Pd - Power Dissipation 150mW
Current - Collector(Ic) 100mA
Collector - Emitter Voltage VCEO 12V
Operating Temperature -65℃~+150℃@(Tj)
Description Bipolar (BJT) Transistor NPN 12V 100mA 4.5GHz 150mW Surface Mount SOT-323
Mfr. Part # 2SC4226 R24
Package SOT-323
Model Number 2SC4226 R24

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  1. Product Details
  2. Company Details

Product Specification

Emitter-Base Voltage(Vebo) 3V Current - Collector Cutoff 1uA
DC Current Gain 70@7mA,3V Transition frequency(fT) 4.5GHz
Vce Saturation(VCE(sat)) - type NPN
Pd - Power Dissipation 150mW Current - Collector(Ic) 100mA
Collector - Emitter Voltage VCEO 12V Operating Temperature -65℃~+150℃@(Tj)
Description Bipolar (BJT) Transistor NPN 12V 100mA 4.5GHz 150mW Surface Mount SOT-323 Mfr. Part # 2SC4226 R24
Package SOT-323 Model Number 2SC4226 R24

Product Overview

The 2SC4226 is an NPN Silicon Epitaxial Planar Transistor designed for high-frequency, low-noise amplifier applications. It offers low noise characteristics and high gain, with a power dissipation capability of 150mW. This transistor is suitable for demanding audio and RF circuits where signal integrity and amplification efficiency are critical.

Product Attributes

  • Type: NPN Silicon Epitaxial Planar Transistor
  • Package: SOT-323 (Plastic surface mounted package)
  • Brand: SLKORMICRO (implied by website URL)

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Units
MAXIMUM RATING @ Ta=25
Collector-Base Voltage VCBO 20 V
Collector-Emitter Voltage VCEO 12 V
Emitter-Base Voltage VEBO 3 V
Collector Current -Continuous IC 100 mA
Collector Dissipation PC 150 mW
Junction and Storage Temperature Tj,Tstg -65 +150
ELECTRICAL CHARACTERISTICS @ Ta=25
Collector-base breakdown voltage V(BR)CBO IC=100A,IE=0 20 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 12 V
Emitter-base breakdown voltage V(BR)EBO IE=100A,IC=0 3 V
Collector cut-off current ICBO VCB=10V,IE=0 1.0 A
Emitter cut-off current IEBO VEB=1V,IC=0 1.0 A
DC current gain hFE VCE=3V,IC=7mA 40 110 250
Feed back capacitance Cre VCE=3V,IE=0mA,f=1MHz 0.7 1.5 pF
Transition frequency fT VCE=3V, IE=7mA 3.0 4.5 GHz
Noise Figure NF VCE=3V,IC=7mA,f=1GHz 1.2 2.5 dB

Classification of hFE

Marking hFE Range
R23 40-80
R24 70-140
R25 125-250

Package Outline (SOT-323)

Dimension Min Max Unit
A 1.8 2.2 mm
B 1.15 1.35 mm
C 1.0 Typical
D 0.15 0.35 mm
E 0.25 0.40 mm
G 1.2 1.4 mm
H 0.02 0.1 mm
J 0.1 Typical
K 2.2 2.4 mm

2009141834_Slkor-2SC4226-R24_C781320.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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