| Emitter-Base Voltage(Vebo) | 3V |
| Current - Collector Cutoff | 1uA |
| DC Current Gain | 70@7mA,3V |
| Transition frequency(fT) | 4.5GHz |
| Vce Saturation(VCE(sat)) | - |
| type | NPN |
| Pd - Power Dissipation | 150mW |
| Current - Collector(Ic) | 100mA |
| Collector - Emitter Voltage VCEO | 12V |
| Operating Temperature | -65℃~+150℃@(Tj) |
| Description | Bipolar (BJT) Transistor NPN 12V 100mA 4.5GHz 150mW Surface Mount SOT-323 |
| Mfr. Part # | 2SC4226 R24 |
| Package | SOT-323 |
| Model Number | 2SC4226 R24 |
View Detail Information
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Product Specification
| Emitter-Base Voltage(Vebo) | 3V | Current - Collector Cutoff | 1uA |
| DC Current Gain | 70@7mA,3V | Transition frequency(fT) | 4.5GHz |
| Vce Saturation(VCE(sat)) | - | type | NPN |
| Pd - Power Dissipation | 150mW | Current - Collector(Ic) | 100mA |
| Collector - Emitter Voltage VCEO | 12V | Operating Temperature | -65℃~+150℃@(Tj) |
| Description | Bipolar (BJT) Transistor NPN 12V 100mA 4.5GHz 150mW Surface Mount SOT-323 | Mfr. Part # | 2SC4226 R24 |
| Package | SOT-323 | Model Number | 2SC4226 R24 |
The 2SC4226 is an NPN Silicon Epitaxial Planar Transistor designed for high-frequency, low-noise amplifier applications. It offers low noise characteristics and high gain, with a power dissipation capability of 150mW. This transistor is suitable for demanding audio and RF circuits where signal integrity and amplification efficiency are critical.
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| MAXIMUM RATING @ Ta=25 | ||||||
| Collector-Base Voltage | VCBO | 20 | V | |||
| Collector-Emitter Voltage | VCEO | 12 | V | |||
| Emitter-Base Voltage | VEBO | 3 | V | |||
| Collector Current -Continuous | IC | 100 | mA | |||
| Collector Dissipation | PC | 150 | mW | |||
| Junction and Storage Temperature | Tj,Tstg | -65 | +150 | |||
| ELECTRICAL CHARACTERISTICS @ Ta=25 | ||||||
| Collector-base breakdown voltage | V(BR)CBO | IC=100A,IE=0 | 20 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=1mA,IB=0 | 12 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=100A,IC=0 | 3 | V | ||
| Collector cut-off current | ICBO | VCB=10V,IE=0 | 1.0 | A | ||
| Emitter cut-off current | IEBO | VEB=1V,IC=0 | 1.0 | A | ||
| DC current gain | hFE | VCE=3V,IC=7mA | 40 | 110 | 250 | |
| Feed back capacitance | Cre | VCE=3V,IE=0mA,f=1MHz | 0.7 | 1.5 | pF | |
| Transition frequency | fT | VCE=3V, IE=7mA | 3.0 | 4.5 | GHz | |
| Noise Figure | NF | VCE=3V,IC=7mA,f=1GHz | 1.2 | 2.5 | dB | |
| Marking | hFE Range |
|---|---|
| R23 | 40-80 |
| R24 | 70-140 |
| R25 | 125-250 |
| Dimension | Min | Max | Unit |
|---|---|---|---|
| A | 1.8 | 2.2 | mm |
| B | 1.15 | 1.35 | mm |
| C | 1.0 | Typical | |
| D | 0.15 | 0.35 | mm |
| E | 0.25 | 0.40 | mm |
| G | 1.2 | 1.4 | mm |
| H | 0.02 | 0.1 | mm |
| J | 0.1 | Typical | |
| K | 2.2 | 2.4 | mm |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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