Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 6V |
| Current - Collector Cutoff | 100nA |
| DC Current Gain | 50@10mA,10V |
| Transition frequency(fT) | 50MHz |
| Number | 1 NPN |
| type | NPN |
| Vce Saturation(VCE(sat)) | 750mV@50mA,5mA |
| Pd - Power Dissipation | 350mW |
| Current - Collector(Ic) | 200mA |
| Collector - Emitter Voltage VCEO | 400V |
| Operating Temperature | - |
| Description | Bipolar (BJT) Transistor NPN 400V 0.2A 50MHz 0.35W Surface Mount SOT-23 |
| Mfr. Part # | MMBTA44 |
| Package | SOT-23 |
| Model Number | MMBTA44 |
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Product Specification
| Emitter-Base Voltage(Vebo) | 6V | Current - Collector Cutoff | 100nA |
| DC Current Gain | 50@10mA,10V | Transition frequency(fT) | 50MHz |
| Number | 1 NPN | type | NPN |
| Vce Saturation(VCE(sat)) | 750mV@50mA,5mA | Pd - Power Dissipation | 350mW |
| Current - Collector(Ic) | 200mA | Collector - Emitter Voltage VCEO | 400V |
| Operating Temperature | - | Description | Bipolar (BJT) Transistor NPN 400V 0.2A 50MHz 0.35W Surface Mount SOT-23 |
| Mfr. Part # | MMBTA44 | Package | SOT-23 |
| Model Number | MMBTA44 |
The MMBTA44 is a general-purpose NPN silicon transistor designed for high voltage applications. It features a high Collector-Emitter Voltage (VCEO) of 400V and a continuous Collector Current (Ic) of 200mA, with a Power Dissipation (Pc) of 350mW. This transistor is a complement to the MMBTA94 and is suitable for various electronic circuits requiring robust voltage handling capabilities.
| Parameter | Symbol | Test Conditions | Limit | Unit |
|---|---|---|---|---|
| Collector-Base Voltage | VCBO | 400 | V | |
| Collector-Emitter Voltage | VCEO | 400 | V | |
| Emitter-Base Voltage | VEBO | 6 | V | |
| Collector Current - Continuous | IC | 0.2 | A | |
| Power Dissipation | PC | 0.35 | W | |
| Thermal Resistance Junction to Ambient | RJA | 357 | /W | |
| Junction Temperature | TJ | 150 | ||
| Storage Temperature | TSTG | -55+150 | ||
| Collector-Base Breakdown Voltage | V(BR)CBO | IC=100A, IE=0 | 400 | V |
| Collector-Emitter Breakdown Voltage | V(BR)CEO* | IC=1mA, IB=0 | 400 | V |
| Emitter-Base Breakdown Voltage | V(BR)EBO | IE=10A, IC=0 | 6 | V |
| Collector Cut-off Current | ICBO | VCB=400V, IE=0 | 0.1 | A |
| Emitter Cut-off Current | IEBO | VEB=4V, IC=0 | 0.1 | A |
| DC Current Gain (hFE(1)) | hFE | VCE=10V, IC=1mA | 40 | |
| DC Current Gain (hFE(2)) | hFE | VCE=10V, IC=10mA | 50 - 200 | |
| DC Current Gain (hFE(3)) | hFE | VCE=10V, IC=50mA | 45 | |
| DC Current Gain (hFE(4)) | hFE | VCE=10V, IC=100mA | 40 | |
| Collector-Emitter Saturation Voltage (VCE(sat)1) | VCE(sat) | IC=1mA, IB=0.1mA | 0.4 | V |
| Collector-Emitter Saturation Voltage (VCE(sat)2) | VCE(sat) | IC=10mA, IB=1mA | 0.5 | V |
| Collector-Emitter Saturation Voltage (VCE(sat)3) | VCE(sat) | IC=50mA, IB=5mA | 0.75 | V |
| Base-Emitter Saturation Voltage | VBE(sat) | IC=10mA, IB=1mA | 0.75 | V |
| Collector Output Capacitance | Cob | VCB=20V, IE=0, f=1MHz | 7 | pF |
| Emitter Input Capacitance | Cib | VEB=0.5V, IC=0, f=1MHz | 130 | pF |
| Transition Frequency | fT | VCE=20V, IC=10mA, f=30MHz | 50 | MHz |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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