| Current - Collector Cutoff | 10uA |
| Emitter-Base Voltage(Vebo) | 5V |
| DC Current Gain | 60@2A,1V |
| Transition frequency(fT) | 40MHz |
| Vce Saturation(VCE(sat)) | 1V@8A,0.4A |
| type | PNP |
| Pd - Power Dissipation | 50W |
| Current - Collector(Ic) | 10A |
| Collector - Emitter Voltage VCEO | 80V |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Description | Bipolar (BJT) Transistor PNP 80V 10A 40MHz 50W Through Hole TO-220-3 |
| Mfr. Part # | SL45H11 |
| Package | TO-220-3 |
| Model Number | SL45H11 |
View Detail Information
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Product Specification
| Current - Collector Cutoff | 10uA | Emitter-Base Voltage(Vebo) | 5V |
| DC Current Gain | 60@2A,1V | Transition frequency(fT) | 40MHz |
| Vce Saturation(VCE(sat)) | 1V@8A,0.4A | type | PNP |
| Pd - Power Dissipation | 50W | Current - Collector(Ic) | 10A |
| Collector - Emitter Voltage VCEO | 80V | Operating Temperature | -55℃~+150℃@(Tj) |
| Description | Bipolar (BJT) Transistor PNP 80V 10A 40MHz 50W Through Hole TO-220-3 | Mfr. Part # | SL45H11 |
| Package | TO-220-3 | Model Number | SL45H11 |
The SL45H11 is a Silicon PNP Power Transistor designed for general-purpose power amplification and switching. It features a low Collector-Emitter Saturation Voltage (VCE(sat) = 1.0V Max at IC = 8A) and fast switching speeds. This transistor is a complement to the Type SL44H11 and offers minimum lot-to-lot variations for robust device performance. It is ideal for output or driver stages in applications such as switching regulators, converters, and power amplifiers.
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| ABSOLUTE MAXIMUM RATINGS (Ta=25) | ||||||
| VCEO | Collector-Emitter Voltage | -80 | V | |||
| VEBO | Emitter-Base Voltage | -5 | V | |||
| IC | Collector Current-Continuous | -10 | A | |||
| ICM | Collector Current-Peak | -20 | A | |||
| PC | Collector Power Dissipation | @TC=25 | 50 | W | ||
| Tj | Junction Temperature | -55 | 150 | |||
| Tstg | Storage Temperature Range | -55 | 150 | |||
| THERMAL CHARACTERISTICS | ||||||
| Rth j-c | Thermal Resistance, Junction to Case | 2.5 | /W | |||
| Rth j-a | Thermal Resistance, Junction to Ambient | 75 | /W | |||
| ELECTRICAL CHARACTERISTICS (TC=25 unless otherwise specified) | ||||||
| VCE(sat) | Collector-Emitter Saturation Voltage | IC= -8A ;IB= -0.4 A | -1.0 | V | ||
| VBE(sat) | Base-Emitter Saturation Voltage | IC= -8A ;IB= -0.8 A | -1.5 | V | ||
| ICES | Collector Cutoff Current | VCE=Rated VCEO; VBE= 0 | -10 | A | ||
| IEBO | Emitter Cutoff Current | VEB= -5V; IC= 0 | -100 | A | ||
| hFE-1 | DC Current Gain | IC= -2A ; VCE= -1V | 60 | |||
| hFE-2 | DC Current Gain | IC= -4A ; VCE= -1V | 40 | |||
| COB | Output Capacitance | VCB= -10V, f= 1.0MHz | 230 | pF | ||
| fT | Current-GainBandwidth Product | IC=-0.5A;VCE=-10V;ftest=20MHz | 40 | MHz | ||
| Symbol | Dimensions In Millimeters | Dimensions In Inches |
|---|---|---|
| A | 4.470 - 4.670 | 0.176 - 0.184 |
| A1 | 2.520 - 2.820 | 0.099 - 0.111 |
| b | 0.710 - 0.910 | 0.028 - 0.036 |
| b1 | 1.170 - 1.370 | 0.046 - 0.054 |
| c | 0.310 - 0.530 | 0.012 - 0.021 |
| c1 | 1.170 - 1.370 | 0.046 - 0.054 |
| D | 10.010 - 10.310 | 0.394 - 0.406 |
| E | 8.500 - 8.900 | 0.335 - 0.350 |
| E1 | 12.060 - 12.460 | 0.475 - 0.491 |
| e | 0.100 TYP (2.540 TYP) | |
| e1 | 4.980 - 5.180 | 0.196 - 0.204 |
| F | 2.590 - 2.890 | 0.102 - 0.114 |
| h | 0.000 - 0.300 | 0.000 - 0.012 |
| L | 13.400 - 13.800 | 0.528 - 0.543 |
| L1 | 3.560 - 3.960 | 0.140 - 0.156 |
| 3.735 - 3.935 | 0.147 - 0.155 |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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