| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 100nA |
| DC Current Gain | 240@0.5A,2V |
| Transition frequency(fT) | 120MHz |
| Number | 1 NPN |
| Vce Saturation(VCE(sat)) | 500mV@1A,50mA |
| type | NPN |
| Pd - Power Dissipation | 500mW |
| Current - Collector(Ic) | 2A |
| Collector - Emitter Voltage VCEO | 50V |
| Operating Temperature | - |
| Description | Bipolar (BJT) Transistor NPN 50V 2A 120MHz 500mW Surface Mount SOT-89 |
| Mfr. Part # | 2SC2873-Y |
| Package | SOT-89 |
| Model Number | 2SC2873-Y |
View Detail Information
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Product Specification
| Emitter-Base Voltage(Vebo) | 5V | Current - Collector Cutoff | 100nA |
| DC Current Gain | 240@0.5A,2V | Transition frequency(fT) | 120MHz |
| Number | 1 NPN | Vce Saturation(VCE(sat)) | 500mV@1A,50mA |
| type | NPN | Pd - Power Dissipation | 500mW |
| Current - Collector(Ic) | 2A | Collector - Emitter Voltage VCEO | 50V |
| Operating Temperature | - | Description | Bipolar (BJT) Transistor NPN 50V 2A 120MHz 500mW Surface Mount SOT-89 |
| Mfr. Part # | 2SC2873-Y | Package | SOT-89 |
| Model Number | 2SC2873-Y |
The 2SC2873 is an NPN transistor designed for high-speed switching applications. It features a small flat package, high-speed switching time, and a low collector-emitter saturation voltage. This transistor is complementary to the 2SA1213 and is suitable for use in power amplifiers and switching circuits.
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | IC=100A, IE=0 | 50 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=1mA, IB=0 | 50 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=100A, IC=0 | 5 | V | ||
| Collector cut-off current | ICBO | VCB=50V, IE=0 | 0.1 | A | ||
| Emitter cut-off current | IEBO | VEB=5V, IC=0 | 0.1 | A | ||
| DC current gain (hFE(1)) | hFE(1) | VCE=2V, IC=0.5A | 70 | 240 | ||
| DC current gain (hFE(2)) | hFE(2) | VCE=2V, IC=2A | 20 | |||
| Collector-emitter saturation voltage | VCE(sat) | IC=1A, IB=50mA | 0.5 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=1A, IB=50mA | 1.2 | V | ||
| Transition frequency | fT | VCE=2V, IC=0.5A | 120 | MHz | ||
| Collector output capacitance | Cob | VCB=10V, IE=0, f=1MHz | 30 | pF |
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Base Voltage | VCBO | 50 | V |
| Collector-Emitter Voltage | VCEO | 50 | V |
| Emitter-Base Voltage | VEBO | 5 | V |
| Collector Current | IC | 2 | A |
| Collector Power Dissipation | PC | 500 | mW |
| Thermal Resistance Junction To Ambient | RJA | 250 | /W |
| Junction Temperature | Tj | 150 | |
| Storage Temperature | Tstg | -55~+150 |
| hFE Rank | Range | Marking |
|---|---|---|
| O | 70140 | MO |
| Y | 120240 | MY |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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