| Emitter-Base Voltage(Vebo) | 6V |
| Current - Collector Cutoff | 1uA |
| DC Current Gain | 400@1A,2V |
| Transition frequency(fT) | 50MHz |
| Vce Saturation(VCE(sat)) | 500mV |
| type | NPN |
| Pd - Power Dissipation | 500mW |
| Current - Collector(Ic) | 3A |
| Collector - Emitter Voltage VCEO | 30V |
| Operating Temperature | - |
| Description | Bipolar (BJT) Transistor NPN 30V 3A 50MHz 500mW Surface Mount SOT-89 |
| Mfr. Part # | D882 |
| Package | SOT-89 |
| Model Number | D882 |
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Product Specification
| Emitter-Base Voltage(Vebo) | 6V | Current - Collector Cutoff | 1uA |
| DC Current Gain | 400@1A,2V | Transition frequency(fT) | 50MHz |
| Vce Saturation(VCE(sat)) | 500mV | type | NPN |
| Pd - Power Dissipation | 500mW | Current - Collector(Ic) | 3A |
| Collector - Emitter Voltage VCEO | 30V | Operating Temperature | - |
| Description | Bipolar (BJT) Transistor NPN 30V 3A 50MHz 500mW Surface Mount SOT-89 | Mfr. Part # | D882 |
| Package | SOT-89 | Model Number | D882 |
The D882 TRANSISTOR (NPN) is a semiconductor component designed for electronic circuits. It offers a continuous collector current of 3 A and a power dissipation of 0.5 W. Key electrical characteristics include a DC current gain (hFE) ranging from 60 to 400, and a transition frequency of 50 MHz. This transistor is suitable for various applications requiring amplification and switching functionalities.
| Parameter | Symbol | Test conditions | MIN | TYP | MAX | UNIT |
|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | Ic=100uA ,IE=0 | 40 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC= 10 mA , IB=0 | 30 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE= 100 mA ,IC=0 | 6 | V | ||
| Collector cut-off current | ICBO | VCB=40 V , IE=0 | 1 | uA | ||
| Collector cut-off current | ICEO | VCE=30 V , IB=0 | 10 | uA | ||
| Emitter cut-off current | IEBO | VEB=6V , IC=0 | 1 | uA | ||
| DC current gain | hFE(1) | VCE=2V, IC= 1A | 60 | 400 | ||
| DC current gain | hFE(2) | VCE=2V, IC= 100mA | 32 | |||
| Collector-emitter saturation voltage | VCE(sat) | IC=2A, IB= 0.2A | 0.5 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=2A, IB= 0.2A | 1.5 | V | ||
| Transition frequency | fT | VCE=5 V, IC=0.1mA | 50 | MHz | ||
| Collector-Base Voltage | VCBO | (Ta=25 unless otherwise noted) | 40 | V | ||
| Collector-Emitter Voltage | VCEO | (Ta=25 unless otherwise noted) | 30 | V | ||
| Emitter-Base Voltage | VEBO | (Ta=25 unless otherwise noted) | 6 | V | ||
| Collector Current -Continuous | IC | (Ta=25 unless otherwise noted) | 3 | A | ||
| Collector Power Dissipation | PC | (Ta=25 unless otherwise noted) | 0.5 | W | ||
| Junction Temperature | TJ | (Ta=25 unless otherwise noted) | 150 | |||
| Storage Temperature | Tstg | (Ta=25 unless otherwise noted) | -55 | 150 |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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