Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 6V |
| Current - Collector Cutoff | 1uA |
| Pd - Power Dissipation | 500mW |
| Transition frequency(fT) | 300MHz |
| type | PNP |
| Number | 1 PNP |
| Current - Collector(Ic) | 1A |
| Collector - Emitter Voltage VCEO | 60V |
| Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor PNP 60V 1A 300MHz 500mW Surface Mount TSMT-3 |
| Mfr. Part # | 2SA2092TLQ |
| Package | TSMT-3 |
| Model Number | 2SA2092TLQ |
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Product Specification
| Emitter-Base Voltage(Vebo) | 6V | Current - Collector Cutoff | 1uA |
| Pd - Power Dissipation | 500mW | Transition frequency(fT) | 300MHz |
| type | PNP | Number | 1 PNP |
| Current - Collector(Ic) | 1A | Collector - Emitter Voltage VCEO | 60V |
| Operating Temperature | -55℃~+150℃ | Description | Bipolar (BJT) Transistor PNP 60V 1A 300MHz 500mW Surface Mount TSMT-3 |
| Mfr. Part # | 2SA2092TLQ | Package | TSMT-3 |
| Model Number | 2SA2092TLQ |
The ROHM 2SA2092 is a PNP epitaxial planar silicon transistor designed for high-speed switching and low-frequency amplification. It features high-speed switching with a typical fall time of 30ns at IC = -1A, low saturation voltage (Typ. -200mV at IC = -500mA, IB = -50mA), strong discharge resistance for inductive and capacitance loads, and low switching noise. This transistor is suitable for applications requiring fast switching characteristics and efficient amplification.
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Conditions |
| Collector-base voltage | VCBO | -60 | V | |||
| Collector-emitter voltage | VCEO | -60 | V | |||
| Emitter-base voltage | VEBO | -6 | V | |||
| Collector current (DC) | IC | -1 | A | |||
| Collector current (PULSE, Pw=10ms) | ICP | -2 | A | |||
| Power dissipation (Each terminal mounted on a recommended land) | PC | 500 | mW | *1 | ||
| Junction temperature | Tj | 150 | C | |||
| Range of storage temperature | Tstg | -55 | +150 | C | ||
| Collector-emitter breakdown voltage | BVCEO | -60 | V | IC= -100A | ||
| Collector-base breakdown voltage | BVCBO | -60 | V | IC= -1mA | ||
| Emitter-base breakdown voltage | BVEBO | -6 | V | IE= -100A | ||
| Collector cut-off current | ICBO | -1.0 | A | VCB= -40V, VEB= -4V | ||
| Emitter cut-off current | IEBO | -1.0 | A | |||
| Collector-emitter saturation voltage | VCE(sat) | -200 | -500 | mV | IC= -500mA, IB= -50mA (*1) | |
| DC current gain | hFE | 120 | 300 | VCE= -2V, IC= -100mA (*3) | ||
| Transition frequency | fT | 270 | MHz | VCE= -10V, IE=100mA, f=10MHz (*1) | ||
| Collector output capacitance | Cob | 15 | 30 | pF | VCB= -10V, IE=0, f=1MHz (*1) | |
| Turn-on time | ton | - | ns | VCC= -25V, IC= -1A, IB1= -100mA, IB2=100mA (*2) | ||
| Storage time | tstg | - | ns | VCC= -25V, IC= -1A, IB1= -100mA, IB2=100mA (*2) | ||
| Fall time | tf | 30 | ns | VCC= -25V, IC= -1A, IB1= -100mA, IB2=100mA (*2) |
*1 Pulse measurement
*2 See switching test circuit
*3 hFE rank
| Rank | hFE |
| Q | 120-270 |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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