Hefei Purple Horn E-Commerce Co., Ltd.
| Emitter-Base Voltage(Vebo) | 6V |
| Current - Collector Cutoff | 1uA |
| Type | NPN |
| DC Current Gain | 180@50mA,2V |
| Transition frequency(fT) | 360MHz |
| Vce Saturation(VCE(sat)) | 350mV@700mA,35mA |
| Pd - Power Dissipation | 2W |
| Current - Collector(Ic) | 2A |
| Collector - Emitter Voltage VCEO | 50V |
| Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 50V 2A 360MHz 2W Surface Mount SOT-89 |
| Mfr. Part # | 2SCR553PT100 |
| Package | SOT-89 |
| Model Number | 2SCR553PT100 |
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Product Specification
| Emitter-Base Voltage(Vebo) | 6V | Current - Collector Cutoff | 1uA |
| Type | NPN | DC Current Gain | 180@50mA,2V |
| Transition frequency(fT) | 360MHz | Vce Saturation(VCE(sat)) | 350mV@700mA,35mA |
| Pd - Power Dissipation | 2W | Current - Collector(Ic) | 2A |
| Collector - Emitter Voltage VCEO | 50V | Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 50V 2A 360MHz 2W Surface Mount SOT-89 | Mfr. Part # | 2SCR553PT100 |
| Package | SOT-89 | Model Number | 2SCR553PT100 |
The 2SCR553P is a middle power transistor designed for low frequency amplification and high-speed switching applications. It features low saturation voltage, typically VCE(sat) = 350mV (Max.), and high-speed switching capabilities, making it suitable for demanding electronic circuits.
| Parameter | Symbol | Conditions | Values | Unit |
| Collector-base voltage | VCBO | 50 | V | |
| Collector-emitter voltage | VCEO | 50 | V | |
| Emitter-base voltage | VEBO | 6 | V | |
| Collector current | IC | 2 | A | |
| Collector peak current | ICP*1 | Pw=10ms, Single Pulse | 4 | A |
| Power dissipation | PD*2 | Each terminal mounted on a reference land. | 0.5 | W |
| Power dissipation | PD*3 | Mounted on a ceramic board.(40x40x0.7mm) | 2.0 | W |
| Junction temperature | Tj | 150 | ||
| Range of storage temperature | Tstg | -55 to +150 | ||
| Collector-base breakdown voltage | BVCBO | IC = 100A | 50 | V |
| Collector-emitter breakdown voltage | BVCEO | IC = 1mA | 50 | V |
| Emitter-base breakdown voltage | BVEBO | IE = 100A | 6 | V |
| Collector cut-off current | ICBO | VCB = 50V | 1.0 | A |
| Emitter cut-off current | IEBO | VEB = 4V | 1.0 | A |
| Collector-emitter saturation voltage | VCE(sat)*4 | IC = 700mA, IB = 35mA | 350 (Max.) | mV |
| Base-emitter saturation voltage | VBE(sat)*4 | IC = 700mA, IB = 35mA | 1.3 (Max.) | V |
| DC current gain | hFE | VCE = 2V, IC = 50mA | 180 - 450 | - |
| Transition frequency | fT*4 | VCE = 10V, IE = -300mA, f = 100MHz | 360 (Typ.) | MHz |
| Output capacitance | Cob | VCB = 10V, IE = 0A, f = 1MHz | 12 (Typ.) | pF |
| Turn-On time | ton | IC = 1A, IB1 = 100mA, IB2 = -100mA, VCC 10V, RL = 10 | 45 (Max.) | ns |
| Storage time | tstg | 420 (Max.) | ns | |
| Fall time | tf | 75 (Max.) | ns |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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