| Current - Collector Cutoff | 500nA |
| Pd - Power Dissipation | 2W |
| Transition frequency(fT) | 110MHz |
| type | NPN |
| Current - Collector(Ic) | 2A |
| Collector - Emitter Voltage VCEO | 25V |
| Description | 2W NPN 2A 25V TO-243AA Single Bipolar Transistors RoHS |
| Mfr. Part # | 2SD2153T100V |
| Package | TO-243AA |
| Model Number | 2SD2153T100V |
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Product Specification
| Current - Collector Cutoff | 500nA | Pd - Power Dissipation | 2W |
| Transition frequency(fT) | 110MHz | type | NPN |
| Current - Collector(Ic) | 2A | Collector - Emitter Voltage VCEO | 25V |
| Description | 2W NPN 2A 25V TO-243AA Single Bipolar Transistors RoHS | Mfr. Part # | 2SD2153T100V |
| Package | TO-243AA | Model Number | 2SD2153T100V |
The 2SD2153 is a high-gain amplifier transistor designed for low-frequency power amplification. It features low saturation voltage and high DC current gain, making it suitable for various amplification applications.
| Parameter | Symbol | Conditions | Values | Unit |
| Collector-base voltage | VCBO | 30 | V | |
| Collector-emitter voltage | VCEO | 25 | V | |
| Emitter-base voltage | VEBO | 6 | V | |
| Collector current | IC | 2 | A | |
| Collector current (peak) | ICP*1 | Single Pulse, Pw=10ms | 3 | A |
| Power dissipation | PD*2 | Each terminal mounted on a reference land. | 0.5 | W |
| Power dissipation | PD*3 | Mounted on a 40x40x0.7mm ceramic board. | 2.0 | W |
| Junction temperature | Tj | 150 | ||
| Range of storage temperature | Tstg | -55 to +150 | ||
| Collector-base breakdown voltage | BVCBO | IC = 50A | 30 | V |
| Collector-emitter breakdown voltage | BVCEO | IC = 1mA | 25 | V |
| Emitter-base breakdown voltage | BVEBO | IE = 50A | 6 | V |
| Collector cut-off current | ICBO | VCB = 20V | - | 500 nA |
| Emitter cut-off current | IEBO | VEB = 5V | - | 500 nA |
| Collector-emitter saturation voltage | VCE(sat)*4 | IC = 1A, IB = 20mA | - | 500 mV |
| DC current gain | hFE*4 | VCE = 6V, IC = 0.5A | 560 - 2700 | - |
| Transition frequency | fT | VCE = 10V, IE = -10mA, f = 100MHz | - | 110 MHz |
| Output capacitance | Cob | VCB = 10V, IE = 0A, f = 1MHz | - | 22 pF |
*1 Single Pulse, Pw=10ms
*2 Each terminal mounted on a reference land.
*3 Mounted on a 40x40x0.7mm ceramic board.
*4 Pulsed
hFE values are classified as follows: rank U (560-1200), V (820-1800), W (1200-2700)
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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