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Hefei Purple Horn E-Commerce Co., Ltd.

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China Low frequency power amplifier transistor ROHM 2SD2153T100V with high gain and
China Low frequency power amplifier transistor ROHM 2SD2153T100V with high gain and

  1. China Low frequency power amplifier transistor ROHM 2SD2153T100V with high gain and
  2. China Low frequency power amplifier transistor ROHM 2SD2153T100V with high gain and
  3. China Low frequency power amplifier transistor ROHM 2SD2153T100V with high gain and

Low frequency power amplifier transistor ROHM 2SD2153T100V with high gain and

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Current - Collector Cutoff 500nA
Pd - Power Dissipation 2W
Transition frequency(fT) 110MHz
type NPN
Current - Collector(Ic) 2A
Collector - Emitter Voltage VCEO 25V
Description 2W NPN 2A 25V TO-243AA Single Bipolar Transistors RoHS
Mfr. Part # 2SD2153T100V
Package TO-243AA
Model Number 2SD2153T100V

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Product Specification

Current - Collector Cutoff 500nA Pd - Power Dissipation 2W
Transition frequency(fT) 110MHz type NPN
Current - Collector(Ic) 2A Collector - Emitter Voltage VCEO 25V
Description 2W NPN 2A 25V TO-243AA Single Bipolar Transistors RoHS Mfr. Part # 2SD2153T100V
Package TO-243AA Model Number 2SD2153T100V

Product Overview

The 2SD2153 is a high-gain amplifier transistor designed for low-frequency power amplification. It features low saturation voltage and high DC current gain, making it suitable for various amplification applications.

Product Attributes

  • Brand: ROHM
  • Package: SOT-89 (MPT3)
  • Marking: DN

Technical Specifications

ParameterSymbolConditionsValuesUnit
Collector-base voltageVCBO30V
Collector-emitter voltageVCEO25V
Emitter-base voltageVEBO6V
Collector currentIC2A
Collector current (peak)ICP*1Single Pulse, Pw=10ms3A
Power dissipationPD*2Each terminal mounted on a reference land.0.5W
Power dissipationPD*3Mounted on a 40x40x0.7mm ceramic board.2.0W
Junction temperatureTj150
Range of storage temperatureTstg-55 to +150
Collector-base breakdown voltageBVCBOIC = 50A30V
Collector-emitter breakdown voltageBVCEOIC = 1mA25V
Emitter-base breakdown voltageBVEBOIE = 50A6V
Collector cut-off currentICBOVCB = 20V-500 nA
Emitter cut-off currentIEBOVEB = 5V-500 nA
Collector-emitter saturation voltageVCE(sat)*4IC = 1A, IB = 20mA-500 mV
DC current gainhFE*4VCE = 6V, IC = 0.5A560 - 2700-
Transition frequencyfTVCE = 10V, IE = -10mA, f = 100MHz-110 MHz
Output capacitanceCobVCB = 10V, IE = 0A, f = 1MHz-22 pF

*1 Single Pulse, Pw=10ms
*2 Each terminal mounted on a reference land.
*3 Mounted on a 40x40x0.7mm ceramic board.
*4 Pulsed
hFE values are classified as follows: rank U (560-1200), V (820-1800), W (1200-2700)


2312212031_ROHM-2SD2153T100V_C6667951.pdf

Company Details

Bronze Gleitlager

,

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Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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