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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China High current PNP transistor ROHM 2SA1036KFRAT146R with small SOT346 package and
China High current PNP transistor ROHM 2SA1036KFRAT146R with small SOT346 package and

  1. China High current PNP transistor ROHM 2SA1036KFRAT146R with small SOT346 package and

High current PNP transistor ROHM 2SA1036KFRAT146R with small SOT346 package and

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Emitter-Base Voltage(Vebo) 5V
Current - Collector Cutoff 1uA
Pd - Power Dissipation 200mW
Transition frequency(fT) 200MHz
type PNP
Number 1 PNP
Current - Collector(Ic) 500mA
Collector - Emitter Voltage VCEO 32V
Operating Temperature -55℃~+150℃
Description Bipolar (BJT) Transistor PNP 32V 500mA 200MHz 200mW Surface Mount SOT-346
Mfr. Part # 2SA1036KFRAT146R
Package SOT-346
Model Number 2SA1036KFRAT146R

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  1. Product Details
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Product Specification

Emitter-Base Voltage(Vebo) 5V Current - Collector Cutoff 1uA
Pd - Power Dissipation 200mW Transition frequency(fT) 200MHz
type PNP Number 1 PNP
Current - Collector(Ic) 500mA Collector - Emitter Voltage VCEO 32V
Operating Temperature -55℃~+150℃ Description Bipolar (BJT) Transistor PNP 32V 500mA 200MHz 200mW Surface Mount SOT-346
Mfr. Part # 2SA1036KFRAT146R Package SOT-346
Model Number 2SA1036KFRAT146R

Product Overview

The 2SA1036K FRA is a medium power PNP transistor designed for general purpose and small signal amplification. It features a high collector current capability (500mA) within a small SOT-346 (SMT3) package, low VCE(sat) for ideal low-voltage operation, and complements the 2SC2411K FRA. This AEC-Q101 qualified transistor is suitable for various electronic applications.

Product Attributes

  • Brand: ROHM
  • Certification: AEC-Q101 Qualified
  • Package: SOT-346 (SMT3)

Technical Specifications

Parameter Symbol Conditions Min. Typ. Max. Unit
Collector-base voltage VCBO -40 V
Collector-emitter voltage VCEO -32 V
Emitter-base voltage VEBO -5 V
Collector current IC -500 mA
Power dissipation PD*1 200 mW
Junction temperature Tj 150
Range of storage temperature Tstg -55 +150
Collector-base breakdown voltage BVCBO IC = -100A -40 - V
Collector-emitter breakdown voltage BVCEO IC = -1mA -32 - V
Emitter-base breakdown voltage BVEBO IE = -100A -5 - V
Collector cut-off current ICBO VCB = -20V - -1.0 A
Emitter cut-off current IEBO VEB = -4V - -1.0 A
Collector-emitter saturation voltage VCE(sat) IC = -300mA, IB = -30mA - -600 mV
DC current gain hFE VCE = -3V, IC = -100mA 120 390 -
Transition frequency fT VCE = -5V, IE = 20mA, f = 100MHz - 200 - MHz
Output capacitance Cob VCB = -10V, IE = 0A, f = 1MHz - 7.0 pF

1811031210_ROHM-2SA1036KFRAT146R_C308627.pdf

Company Details

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,

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 and 

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 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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