| Emitter-Base Voltage(Vebo) | 5V |
| Current - Collector Cutoff | 1uA |
| Pd - Power Dissipation | 10W |
| Transition frequency(fT) | 100MHz |
| type | NPN |
| Current - Collector(Ic) | 1A |
| Collector - Emitter Voltage VCEO | 80V |
| Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 80V 1A 100MHz Surface Mount TO-252 |
| Mfr. Part # | 2SD1733TLR |
| Package | TO-252 |
| Model Number | 2SD1733TLR |
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Product Specification
| Emitter-Base Voltage(Vebo) | 5V | Current - Collector Cutoff | 1uA |
| Pd - Power Dissipation | 10W | Transition frequency(fT) | 100MHz |
| type | NPN | Current - Collector(Ic) | 1A |
| Collector - Emitter Voltage VCEO | 80V | Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor NPN 80V 1A 100MHz Surface Mount TO-252 | Mfr. Part # | 2SD1733TLR |
| Package | TO-252 | Model Number | 2SD1733TLR |
The ROHM 2SD1898 / 2SD1733 are NPN middle power transistors designed for driver applications. They offer low VCE(sat) of 0.4V Max. (IC/IB=500mA/20mA) and are available in complementary PNP types. These transistors are suitable for motor drivers, LED drivers, and power supplies. They are lead-free and RoHS compliant.
| Parameter | Symbol | 2SD1898 | 2SD1733 | Unit | Conditions | Min. | Typ. | Max. |
| Collector-emitter breakdown voltage | BVCEO | 80 | V | IC = 1mA | ||||
| Collector-base breakdown voltage | BVCBO | 120 | V | IC = 50mA | ||||
| Emitter-base breakdown voltage | BVEBO | 5 | V | IE = 50mA | ||||
| Collector current | IC | 1.0 | A | |||||
| Collector current (Pulsed) | ICP | 2.0 | A | *1 Pw=20ms , duty=1/2 | ||||
| Collector-base voltage | VCBO | 120 | V | |||||
| Collector-emitter voltage | VCEO | 80 | V | |||||
| Emitter-base voltage | VEBO | 5 | V | |||||
| Junction temperature | Tj | 150 | C | |||||
| Range of storage temperature | Tstg | -55 to +150 | C | |||||
| Power dissipation | PD | 0.5 *2 | 2.0 *3 | W | *2 Each terminal mounted on a reference land | |||
| Power dissipation | PD | 1 *4 | 10 *5 | W | *3 Mounted on a ceramic board (40400.7 mm) | |||
| Power dissipation | PD | W | *4 Mounted on a substrate | |||||
| Power dissipation | PD | W | *5 TC=25C | |||||
| Collector cut-off current | ICBO | - | mA | VCB = 100V | 1 | |||
| Emitter cut-off current | IEBO | - | mA | VEB = 4V | 1 | |||
| Collector-emitter saturation voltage | VCE(sat) | - | V | IC = 500mA, IB = 20mA | 0.40 | |||
| DC current gain | hFE | 120 | - | VCE = 3V, IC = 0.5A | 390 | |||
| DC current gain | hFE | - | 270 | Rank Q | 120 | |||
| DC current gain | hFE | - | 390 | Rank R | 180 | |||
| Transition frequency | fT | 100 | MHz | VCE = 10V, IE = -50mA f=100MHZ | ||||
| Output capacitance | Cob | - | pF | VCB = 10V, IE = 0A f = 1MHz | 20 | |||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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