| Emitter-Base Voltage(Vebo) | 6V |
| Current - Collector Cutoff | 1uA |
| Pd - Power Dissipation | 2W |
| Transition frequency(fT) | 180MHz |
| type | PNP |
| Number | 1 PNP |
| Current - Collector(Ic) | 3A |
| Collector - Emitter Voltage VCEO | 60V |
| Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor PNP 60V 3A 180MHz 2W Surface Mount SOT-89 |
| Mfr. Part # | 2SA2071T100Q |
| Package | SOT-89 |
| Model Number | 2SA2071T100Q |
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Product Specification
| Emitter-Base Voltage(Vebo) | 6V | Current - Collector Cutoff | 1uA |
| Pd - Power Dissipation | 2W | Transition frequency(fT) | 180MHz |
| type | PNP | Number | 1 PNP |
| Current - Collector(Ic) | 3A | Collector - Emitter Voltage VCEO | 60V |
| Operating Temperature | -55℃~+150℃ | Description | Bipolar (BJT) Transistor PNP 60V 3A 180MHz 2W Surface Mount SOT-89 |
| Mfr. Part # | 2SA2071T100Q | Package | SOT-89 |
| Model Number | 2SA2071T100Q |
The 2SA2071 is a middle power PNP transistor designed for high-speed switching applications. It features low saturation voltage, strong discharge power for inductive and capacitive loads, and complements the 2SC5894 transistor. This component is suitable for low frequency amplifiers and high-speed switching circuits.
| Parameter | Symbol | Conditions | Value | Unit |
| Collector-base voltage | VCBO | -60 | V | |
| Collector-emitter voltage | VCEO | -60 | V | |
| Emitter-base voltage | VEBO | -6 | V | |
| Collector current | IC | -3 | A | |
| Collector current (Pulsed) | ICP*1 | Pw10s duty10% | -6 | A |
| Power dissipation | PD*2 | Each terminal mounted on a reference land. | 0.5 | W |
| Power dissipation | PD*3 | Mounted on a ceramic board(40400.7mm). | 2.0 | W |
| Junction temperature | Tj | 150 | ||
| Range of storage temperature | Tstg | -55 to +150 | ||
| Collector-base breakdown voltage | BVCBO | IC = -100A | -60 | V |
| Collector-emitter breakdown voltage | BVCEO | IC = -1mA | -60 | V |
| Emitter-base breakdown voltage | BVEBO | IE = -100A | -6 | V |
| Collector cut-off current | ICBO | VCB = -40V | -1.0 | A |
| Emitter cut-off current | IEBO | VEB = -4V | -1.0 | A |
| Collector-emitter saturation voltage | VCE(sat)*4 | IC = -2A, IB = -0.2A | -200 (Typ.) | mV |
| DC current gain | hFE | VCE = -2V, IC = -100mA | 120 - 270 | - |
| Transition frequency | fT*4 | VCE = -10V, IE = 100mA, f = 10MHz | 180 | MHz |
| Output capacitance | Cob | VCB = -10V, IE = 0A, f = 1MHz | 50 | pF |
| Turn-On time | ton | IC = -3A, IB1 = -300mA, IB2 = 300mA, VCC -25V, RL = 8.3 See test circuit | 20 | ns |
| Storage time | tstg | 150 | ns | |
| Fall time | tf | 20 | ns |
*1 Pw10s duty10%
*2 Each terminal mounted on a reference land.
*3 Mounted on a ceramic board(40400.7mm).
*4 Pulsed
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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