| Emitter-Base Voltage(Vebo) | 6V |
| Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 300mW |
| Transition frequency(fT) | 140MHz |
| type | PNP |
| Number | 2 PNP |
| Current - Collector(Ic) | 150mA |
| Collector - Emitter Voltage VCEO | 50V |
| Operating Temperature | -55℃~+150℃ |
| Description | Bipolar (BJT) Transistor PNP 50V 150mA 140MHz 300mW Surface Mount SOT-457 |
| Mfr. Part # | IMT1AT110 |
| Package | SOT-457 |
| Model Number | IMT1AT110 |
View Detail Information
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Product Specification
| Emitter-Base Voltage(Vebo) | 6V | Current - Collector Cutoff | 100nA |
| Pd - Power Dissipation | 300mW | Transition frequency(fT) | 140MHz |
| type | PNP | Number | 2 PNP |
| Current - Collector(Ic) | 150mA | Collector - Emitter Voltage VCEO | 50V |
| Operating Temperature | -55℃~+150℃ | Description | Bipolar (BJT) Transistor PNP 50V 150mA 140MHz 300mW Surface Mount SOT-457 |
| Mfr. Part # | IMT1AT110 | Package | SOT-457 |
| Model Number | IMT1AT110 |
The EMT1 / UMT1N / IMT1A are general-purpose dual transistors designed for small signal amplification. They feature two independent 2SA1037AK chips within a single EMT, UMT, or SMT package, enabling half the mounting cost and area compared to discrete components. These transistors are compatible with automatic mounting machines and offer interference-free operation due to their independent elements.
| Part Number | Package | VCEO (V) | IC (mA) | PD (mW/Total) | VCBO (V) | VCEO (V) | VEBO (V) | ICBO (nA) | IEBO (nA) | VCE(sat) (mV) | hFE | fT (MHz) | Cob (pF) |
| EMT1 / UMT1N / IMT1A | EMT6 / UMT6 / SMT6 | -50 | -150 | EMT1/UMT1N: 150 IMT1A: 300 | -60 | -50 | -6 | -100 | -100 | -500 | 120 - 560 | 140 | - 5 |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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