| Emitter-Base Voltage(Vebo) | 12V |
| Current - Collector Cutoff | 500nA |
| Pd - Power Dissipation | 300mW |
| Transition frequency(fT) | 350MHz |
| type | NPN |
| Number | 2 NPN |
| Current - Collector(Ic) | 500mA |
| Collector - Emitter Voltage VCEO | 20V |
| Operating Temperature | - |
| Description | Bipolar (BJT) Transistor NPN 20V 500mA 350MHz 300mW Surface Mount SC-74 |
| Mfr. Part # | IMX9T110 |
| Package | SC-74 |
| Model Number | IMX9T110 |
View Detail Information
Explore similar products
General Purpose Power Amplification Transistor BLUE ROCKET NJW0302GC Silicon PNP
NPN Transistor CBI MMBT3904 SOT23 Package Epitaxial Planar Die Construction for
NPN Bipolar Transistor Guangdong Hottech 2SC1623 L5 with 200mW Power Dissipation
Jilin Sino Microelectronics 3DD13003A 126 NPN transistor for high frequency
Product Specification
| Emitter-Base Voltage(Vebo) | 12V | Current - Collector Cutoff | 500nA |
| Pd - Power Dissipation | 300mW | Transition frequency(fT) | 350MHz |
| type | NPN | Number | 2 NPN |
| Current - Collector(Ic) | 500mA | Collector - Emitter Voltage VCEO | 20V |
| Operating Temperature | - | Description | Bipolar (BJT) Transistor NPN 20V 500mA 350MHz 300mW Surface Mount SC-74 |
| Mfr. Part # | IMX9T110 | Package | SC-74 |
| Model Number | IMX9T110 |
The IMX9 is a general-purpose, isolated dual transistor featuring two 2SD2114K chips in a SMT package. Its independent transistor elements prevent interference, and it is compatible with SMT3 automatic mounting machines, offering reduced mounting costs and area. This NPN silicon transistor is suitable for general electronic equipment.
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Conditions |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25C) | ||||||
| Collector-base voltage | VCBO | 25 | V | |||
| Collector-emitter voltage | VCEO | 20 | V | |||
| Emitter-base voltage | VEBO | 12 | V | |||
| Collector current | IC | 500 | mA | |||
| Junction temperature | Tj | 150 | C | |||
| Storage temperature | Tstg | 55 | +150 | C | ||
| Power dissipation | Pd | 300(TOTAL) | mW | * 200mW per element must not be exceeded. | ||
| Electrical Characteristics (Ta = 25C) | ||||||
| Collector-base breakdown voltage | BVCBO | 25 | V | IC=10A | ||
| Collector-emitter breakdown voltage | BVCEO | 20 | V | IC=1mA | ||
| Emitter-base breakdown voltage | BVEBO | 12 | V | IE=10A | ||
| Collector cutoff current | ICBO | 0.18 | A | VCB=20V | ||
| Emitter cutoff current | IEBO | 0.5 | A | VEB=10V | ||
| DC current transfer ratio | hFE | 560 | 2700 | VCE=3V, IC=10mA | ||
| Collector-emitter saturation voltage | VCE(sat) | 0.4 | V | IC/IB=500mA/20mA | ||
| Transition frequency | fT | 350 | MHz | VCE=10V, IE=50mA, f=100MHz | ||
| Output capacitance | Cob | 8 | pF | VCB=10V, IE=0A, f=1MHz | ||
| Output On-resistance | Ron | 0.8 | IB=1mA, Vi=100mVrms, f=1kHz | |||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
.gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c... .gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c...
Get in touch with us
Leave a Message, we will call you back quickly!