| Ciss-Input Capacitance | 10.5pF@5V |
| FET Type | 2 N-Channel |
| Operating Temperature | - |
| Drain Current (Idss) | 16mA@5V |
| Pd - Power Dissipation | 300mW |
| Gate-Source Cutoff Voltage (VGS(off)) | 300mV@100uA |
| Description | 2 N-Channel 16mA@5V 300mW MCPH-5 JFETs RoHS |
| Mfr. Part # | MCH5908H-TL-E |
| Package | MCPH-5 |
| Model Number | MCH5908H-TL-E |
View Detail Information
Explore similar products
Low level analog switching device onsemi J112 N channel switch Pb free with
Automotive grade P Channel depletion mode JFET onsemi MMBFJ175LT1G with AEC Q101
Silicon Carbide Cascode JFET onsemi UF3C120080K3S designed for switching in
N Channel JFET Switching Transistor onsemi MMBF4393LT1G AECQ101 Qualified PPAP
Product Specification
| Ciss-Input Capacitance | 10.5pF@5V | FET Type | 2 N-Channel |
| Operating Temperature | - | Drain Current (Idss) | 16mA@5V |
| Pd - Power Dissipation | 300mW | Gate-Source Cutoff Voltage (VGS(off)) | 300mV@100uA |
| Description | 2 N-Channel 16mA@5V 300mW MCPH-5 JFETs RoHS | Mfr. Part # | MCH5908H-TL-E |
| Package | MCPH-5 | Model Number | MCH5908H-TL-E |
The MCH5908 is a dual N-Channel JFET in a MCPH5 package, equivalent to two 2SK3557 chips. It offers improved mounting efficiency and is suitable for applications requiring low noise and high transfer admittance. This composite type device is designed for general-purpose use.
| Parameter | Symbol | Conditions | Ratings | Unit |
| Absolute Maximum Ratings | ||||
| Drain-to-Source Voltage | VDSX | 15 | V | |
| Gate-to-Drain Voltage | VGDS | --15 | V | |
| Gate Current | IG | 10 | mA | |
| Drain Current | ID | 50 | mA | |
| Allowable Power Dissipation (1 unit) | PD | 200 | mW | |
| Total Power Dissipation | PT | 300 | mW | |
| Junction Temperature | Tj | 150 | C | |
| Storage Temperature | Tstg | --55 to +150 | C | |
| Electrical Characteristics (Ta=25C) | ||||
| Gate-to-Drain Breakdown Voltage | V(BR)GDS | IG=--10A, VDS=0V | --15 | V |
| Gate-to-Source Leakage Current | IGSS | VGS=--10V, VDS=0V | --1.0 | nA |
| Cutoff Voltage | VGS(off) | VDS=5V, ID=100A | --0.3 to --1.5 | V |
| Zero-Gate Voltage Drain Current | IDSS | VDS=5V, VGS=0V | 10.0* to 32.0* | mA |
| Forward Transfer Admittance | |yfs| | VDS=5V, VGS=0V, f=1kHz | 24 to 35 | mS |
| Input Capacitance | Ciss | VDS=5V, VGS=0V, f=1MHz | 10.5 | pF |
| Reverse Transfer Capacitance | Crss | VDS=5V, VGS=0V, f=1MHz | 3.5 | pF |
| Noise Figure | NF | VDS=5V, Rg=1k, ID=1mA, f=1kHz | 1.0 | dB |
| IDSS Classification | ||||
| Rank | IDSS | Unit | ||
| G | 10 to 20 | mA | ||
| H | 16 to 32 | mA | ||
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
.gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c... .gtr-container-a1b2c3d4 { font-family: Verdana, Helvetica, "Times New Roman", Arial, sans-serif; color: #333; padding: 20px; line-height: 1.6; font-size: 14px; box-sizing: border-box; } .gtr-container-a1b2c3d4 .gtr-heading { font-size: 18px; font-weight: bold; c...
Get in touch with us
Leave a Message, we will call you back quickly!