| Pd - Power Dissipation | 460mW |
| Operating Temperature | - |
| Drain Current (Idss) | 10mA@15V |
| FET Type | - |
| RDS(on) | 18Ω |
| Gate-Source Breakdown Voltage (Vgss) | 25V |
| Gate-Source Cutoff Voltage (VGS(off)) | 4V@10nA |
| Description | 460mW 10mA@15V 18Ω 25V SOT-23-3 JFETs RoHS |
| Mfr. Part # | MMBFJ110 |
| Package | SOT-23-3 |
| Model Number | MMBFJ110 |
View Detail Information
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Product Specification
| Pd - Power Dissipation | 460mW | Operating Temperature | - |
| Drain Current (Idss) | 10mA@15V | FET Type | - |
| RDS(on) | 18Ω | Gate-Source Breakdown Voltage (Vgss) | 25V |
| Gate-Source Cutoff Voltage (VGS(off)) | 4V@10nA | Description | 460mW 10mA@15V 18Ω 25V SOT-23-3 JFETs RoHS |
| Mfr. Part # | MMBFJ110 | Package | SOT-23-3 |
| Model Number | MMBFJ110 |
The MMBFJ110 is an N-Channel JFET specifically designed for digital switching applications requiring very low on-resistance. Sourced from Process 58, this device is Pb-Free.
| Parameter | Symbol | Test Condition | Min | Max | Unit |
| OFF CHARACTERISTICS | |||||
| Gate-Source Breakdown Voltage | V(BR)GSS | IG = -10 A, VDS = 0 | -25 | - | V |
| Gate Reverse Current | IGSS | VGS = -15 V, VDS = 0 | - | -3.0 | nA |
| Gate Reverse Current | IGSS | VGS = -15 V, VDS = 0, TA = 100C | - | -200 | nA |
| Gate-Source Cut-Off Voltage | VGS(off) | VDS = 15 V, ID = 10 nA | -0.5 | -4.0 | V |
| ON CHARACTERISTICS | |||||
| Zero-Gate Voltage Drain Current | IDSS | VDS = 15 V, VGS = 0 (Note 4) | 10 | - | mA |
| Drain-Source On Resistance | rDS(on) | VDS 0.1 V, VGS = 0 | - | 18 | |
| SMALL SIGNAL CHARACTERISTICS | |||||
| Drain-Gate & Source-Gate On Capacitance | Cdg(on), Csg(on) | VDS = 0, VGS = 0, f = 1.0 MHz | - | 85 | pF |
| Drain-Gate & Source-Gate Off Capacitance | Cdg(off), Csg(off) | VDS = 0, VGS = -10 V, f = 1.0 MHz | - | 15 | pF |
| MAXIMUM RATINGS | |||||
| DrainGate Voltage | VDG | 25 | V | ||
| GateSource Voltage | VGS | -25 | V | ||
| Forward Gate Current | IGF | 10 | mA | ||
| Junction Temperature | TJ | 150 | C | ||
| Storage Temperature Range | TJ, TSTG | -55 | 150 | C | |
| THERMAL CHARACTERISTICS | |||||
| Total Device Dissipation | PD | TA = 25C | 460 | mW | |
| Derate Above 25C | 3.68 | mW/C | |||
| Thermal Resistance, Junction-to-Ambient | RJA | Device mounted on FR-4 PCB 36 mm x 18 mm x 1.5 mm; mounting pad for the collector lead minimum 6 cm. | 270 | C/W | |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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