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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China Pb Free digital switching N Channel JFET transistor onsemi MMBFJ110 with very
China Pb Free digital switching N Channel JFET transistor onsemi MMBFJ110 with very

  1. China Pb Free digital switching N Channel JFET transistor onsemi MMBFJ110 with very

Pb Free digital switching N Channel JFET transistor onsemi MMBFJ110 with very

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Pd - Power Dissipation 460mW
Operating Temperature -
Drain Current (Idss) 10mA@15V
FET Type -
RDS(on) 18Ω
Gate-Source Breakdown Voltage (Vgss) 25V
Gate-Source Cutoff Voltage (VGS(off)) 4V@10nA
Description 460mW 10mA@15V 18Ω 25V SOT-23-3 JFETs RoHS
Mfr. Part # MMBFJ110
Package SOT-23-3
Model Number MMBFJ110

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Product Specification

Pd - Power Dissipation 460mW Operating Temperature -
Drain Current (Idss) 10mA@15V FET Type -
RDS(on) 18Ω Gate-Source Breakdown Voltage (Vgss) 25V
Gate-Source Cutoff Voltage (VGS(off)) 4V@10nA Description 460mW 10mA@15V 18Ω 25V SOT-23-3 JFETs RoHS
Mfr. Part # MMBFJ110 Package SOT-23-3
Model Number MMBFJ110

Product Overview

The MMBFJ110 is an N-Channel JFET specifically designed for digital switching applications requiring very low on-resistance. Sourced from Process 58, this device is Pb-Free.

Product Attributes

  • Brand: ON Semiconductor
  • Origin: Sourced from Process 58
  • Certifications: Pb-Free

Technical Specifications

ParameterSymbolTest ConditionMinMaxUnit
OFF CHARACTERISTICS
Gate-Source Breakdown VoltageV(BR)GSSIG = -10 A, VDS = 0-25-V
Gate Reverse CurrentIGSSVGS = -15 V, VDS = 0--3.0nA
Gate Reverse CurrentIGSSVGS = -15 V, VDS = 0, TA = 100C--200nA
Gate-Source Cut-Off VoltageVGS(off)VDS = 15 V, ID = 10 nA-0.5-4.0V
ON CHARACTERISTICS
Zero-Gate Voltage Drain CurrentIDSSVDS = 15 V, VGS = 0 (Note 4)10-mA
Drain-Source On ResistancerDS(on)VDS 0.1 V, VGS = 0-18
SMALL SIGNAL CHARACTERISTICS
Drain-Gate & Source-Gate On CapacitanceCdg(on), Csg(on)VDS = 0, VGS = 0, f = 1.0 MHz-85pF
Drain-Gate & Source-Gate Off CapacitanceCdg(off), Csg(off)VDS = 0, VGS = -10 V, f = 1.0 MHz-15pF
MAXIMUM RATINGS
DrainGate VoltageVDG25V
GateSource VoltageVGS-25V
Forward Gate CurrentIGF10mA
Junction TemperatureTJ150C
Storage Temperature RangeTJ, TSTG-55150C
THERMAL CHARACTERISTICS
Total Device DissipationPDTA = 25C460mW
Derate Above 25C3.68mW/C
Thermal Resistance, Junction-to-AmbientRJADevice mounted on FR-4 PCB 36 mm x 18 mm x 1.5 mm; mounting pad for the collector lead minimum 6 cm.270C/W

2410121854_onsemi-MMBFJ110_C891685.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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