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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
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China Power Transistor onsemi UF3C065080T3S Silicon Carbide FET with Pb Free and RoHS
China Power Transistor onsemi UF3C065080T3S Silicon Carbide FET with Pb Free and RoHS

  1. China Power Transistor onsemi UF3C065080T3S Silicon Carbide FET with Pb Free and RoHS

Power Transistor onsemi UF3C065080T3S Silicon Carbide FET with Pb Free and RoHS

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Description TO-220-3 JFETs RoHS
Mfr. Part # UF3C065080T3S
Package TO-220-3
Model Number UF3C065080T3S

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Product Specification

Description TO-220-3 JFETs RoHS Mfr. Part # UF3C065080T3S
Package TO-220-3 Model Number UF3C065080T3S

Product Overview

This Silicon Carbide (SiC) Cascode JFET device, the UF3C065080T3S, is a normally-off SiC FET designed for high-performance power applications. It integrates a normally-on SiC JFET with a Si MOSFET in a cascode configuration, offering standard gate-drive characteristics for easy integration as a drop-in replacement for Si IGBTs, Si FETs, SiC MOSFETs, and Si superjunction devices. Key advantages include ultra-low gate charge, exceptional reverse recovery, and very low switching losses, making it ideal for switching inductive loads and applications requiring standard gate drive. Available in a TO220-3 package.

Product Attributes

  • Brand: onsemi
  • Material: Silicon Carbide (SiC)
  • Certifications: Pb-Free, Halogen Free, RoHS Compliant

Technical Specifications

ParameterSymbolTest ConditionsValueUnit
Drain-source VoltageVDS650V
Gate-source VoltageVGSDC-25 to +25V
Continuous Drain CurrentIDTC = 25 C31A
Continuous Drain CurrentIDTC = 100 C23A
Pulsed Drain CurrentIDMTC = 25 C65A
Power DissipationPtotTC = 25 C190W
Maximum Junction TemperatureTJ,max175C
Operating and Storage TemperatureTJ, TSTG-55 to 175C
Thermal Resistance, Junction-to-CaseR JC0.61 (Typ)C/W
Drain-source On-resistanceRDS(on)VGS = 12 V, ID = 20 A, TJ = 25 C80 (Typ)m
Drain-source On-resistanceRDS(on)VGS = 12 V, ID = 20 A, TJ = 125 C111 (Typ)m
Drain-source On-resistanceRDS(on)VGS = 12 V, ID = 20 A, TJ = 175 C141 (Typ)m
Gate Threshold VoltageVG(th)VDS = 5 V, ID = 10 mA4 to 6V
Input CapacitanceCissVDS = 100 V, VGS = 0 V, f = 100 kHz1500 (Typ)pF
Output CapacitanceCoss104 (Typ)pF
Reverse Transfer CapacitanceCrss2.6 (Typ)pF
Total Gate ChargeQGVDS = 400 V, ID = 20 A, VGS = -5 V to 15 V51 (Typ)nC
Turn-on Energy Including RS EnergyEONTJ = 25 C182 (Typ)J
Turn-off Energy Including RS EnergyEOFFTJ = 25 C24 (Typ)J
Total Switching Energy Including RS EnergyETOTALTJ = 25 C206 (Typ)J
Turn-on Energy Including RS EnergyEONTJ = 150 C156 (Typ)J
Turn-off Energy Including RS EnergyEOFFTJ = 150 C25 (Typ)J
Total Switching Energy Including RS EnergyETOTALTJ = 150 C181 (Typ)J

2507241715_onsemi-UF3C065080T3S_C45343118.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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