Hefei Purple Horn E-Commerce Co., Ltd.
| Ciss-Input Capacitance | 1.6nF@800V |
| FET Type | 1 N-channel |
| Operating Temperature | -55℃~+175℃ |
| Pd - Power Dissipation | 238W |
| Description | 1 N-channel 238W JFETs RoHS |
| Mfr. Part # | IJW120R070T1FKSA1 |
| Model Number | IJW120R070T1FKSA1 |
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Product Specification
| Ciss-Input Capacitance | 1.6nF@800V | FET Type | 1 N-channel |
| Operating Temperature | -55℃~+175℃ | Pd - Power Dissipation | 238W |
| Description | 1 N-channel 238W JFETs RoHS | Mfr. Part # | IJW120R070T1FKSA1 |
| Model Number | IJW120R070T1FKSA1 |
The Infineon CoolSiC IJW120R070T1 is a 1200 V Silicon Carbide (SiC) JFET Power Transistor designed for high-efficiency power management applications. Leveraging the superior material properties of silicon carbide with a normally-on JFET concept, this transistor offers ultra-fast switching, low intrinsic capacitance, and low gate charge, enabling higher system efficiency, increased power density, and reduced cooling requirements. Its robust design and high operating temperature capability (up to 175 C) contribute to enhanced system reliability. Ideal for solar inverters, high voltage DC/DC or AC/DC conversion, and bidirectional inverters, it is compliant with climate class IEC 60721-3-4 (4K4H).
| Parameter | Symbol | Value | Unit | Note/Test Condition |
|---|---|---|---|---|
| Drain Source Voltage | VDS | 1200 | V | |
| Drain Source On-State Resistance (max) | RDS(on) max | 70 | m | VGS= 0 V; TC= 25 C |
| Gate Charge (typ) | QG, typ | 92 | nC | |
| Pulsed Current, Drain Source (max) | ID, pulse | 114 | A | VGS= 0 V; TC= 25 C |
| Stored Energy in Coss @ 800 V (typ) | Eoss @ 800 V | 38 | J | |
| Maximum Operating Temperature | Tj, max | 175 | C | |
| Type / Ordering Code | IJW120R070T1 | |||
| Package | PG-TO247-3 | |||
| Marking | 120R070T1 | |||
| Breakdown voltage, drain source | V(BR)DSS | 1200 | V | VGS= -19.5 V; IDS= 1 mA; TC= -50 C |
| Gate threshold voltage (typ) | VGS(th) | -12.3 to -13.9 | V | IDS= 14 A; VDS= 40 V; Tj= 100 C (bin dependent) |
| Drain- source leakage current (typ) | IDSS | 6.6 | A | VDS= 1200 V; VGS= -19.5 V; TC= 100 C |
| Drain- source on- state resistance (typ) | RDS(on) | 0.055 | VGS= 0 V; IDS=12.5 A; TC= 25 C | |
| Input capacitance (typ) | Ciss | 1600 | pF | VGS= -19.5 V; VDS= 800 V; f= 1 MHz |
| Output capacitance (typ) | Coss | 102 | pF | VGS= -19.5 V; VDS= 800 V; f= 1 MHz |
| Turn- on delay time (typ) | td(on) | 51 | ns | VDS= 800 V; VGS= -19.5 V/ 0 V; ID= 26 A; TC= 25 C; RG(on),tot= 2 |
| Gate charge, total (typ) | QG | 92 | nC | |
| Diode forward voltage (typ) | VSD | 8 | V | ISD = 25 A; VGS= -19.5 V; TC = 100 C |
| Reverse recovery time (typ) | trr | 14 | ns | ISD = 25 A, VDS = 800 V, RG= 0 , Tj = 25 C |
| Reverse recovery charge (typ) | Qrr | 120 | nC |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification：
Verified Supplier
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