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China Compact Multi Discrete Module Central CMLM8205 TR Featuring P Channel MOSFET and
China Compact Multi Discrete Module Central CMLM8205 TR Featuring P Channel MOSFET and

  1. China Compact Multi Discrete Module Central CMLM8205 TR Featuring P Channel MOSFET and
  2. China Compact Multi Discrete Module Central CMLM8205 TR Featuring P Channel MOSFET and
  3. China Compact Multi Discrete Module Central CMLM8205 TR Featuring P Channel MOSFET and

Compact Multi Discrete Module Central CMLM8205 TR Featuring P Channel MOSFET and

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Description JFETs RoHS
Mfr. Part # CMLM8205 TR
Model Number CMLM8205 TR

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Product Specification

Description JFETs RoHS Mfr. Part # CMLM8205 TR
Model Number CMLM8205 TR

Product Overview

The CENTRAL SEMICONDUCTOR CMLM8205 is a Multi Discrete Module featuring a P-Channel enhancement-mode MOSFET and a low VF Schottky diode in a space-saving SOT-563 surface mount package. This device is engineered for general-purpose small signal applications prioritizing compact size and operational efficiency. Key applications include DC-DC converters and battery-powered portable equipment. It offers a low rDS(on) transistor with a maximum of 3.0 @ VGS=5.0V and a low VF Schottky diode with a maximum of 0.47V @ 0.5A.

Product Attributes

  • Brand: CENTRAL SEMICONDUCTOR
  • Product Family: Multi Discrete Module
  • Package Type: SOT-563
  • Marking Code: C85

Technical Specifications

Specification Parameter Value Units
Case Power Dissipation (TA=25C) Note 1 350 mW
Note 2 300 mW
Note 3 150 mW
Operating and Storage Junction Temperature
TJ, Tstg -65 to +150 C
Thermal Resistance (TA=25C) JA 357 C/W
MOSFET Q1 Ratings (TA=25C) Drain-Source Voltage (VDS) 50 V
Drain-Gate Voltage (VDG) 50 V
Gate-Source Voltage (VGS) 20 V
Continuous Drain Current (ID) 280 mA
Continuous Source Current (IS) (Body Diode) 280 mA
Maximum Pulsed Drain Current (IDM) 1.5 A
Maximum Pulsed Source Current (ISM) 1.5 A
Schottky Diode D1 Ratings (TA=25C) Peak Repetitive Reverse Voltage (VRRM) 40 V
Continuous Forward Current (IF) 500 mA
Peak Repetitive Forward Current (IFRM), tp1.0ms 3.5 A
Peak Forward Surge Current (IFSM), tp=8.0ms 10 A
Gate Leakage Current (IGSSF, IGSSR) VGS=20V, VDS=0 100 nA
Zero Gate Voltage Drain Current (IDSS) VDS=50V, VGS=0 (TA=25C) 1.0 A
(TJ=125C) 500 A
Breakdown Voltage (BVDSS) VGS=0, ID=10A 50 V
Gate Threshold Voltage (VGS(th)) VDS=VGS, ID=250A 1.0 - 2.5 V
Drain-Source On-State Voltage (VDS(ON)) VGS=10V, ID=500mA 1.5 V
VGS=5.0V, ID=50mA 0.15 V
Diode Forward Voltage (VSD) VGS=0, IS=115mA 1.3 V
Drain-Source On-Resistance (rDS(ON)) VGS=10V, ID=500mA 2.5
VGS=10V, ID=500mA, TJ=125C 4.0
VGS=5.0V, ID=50mA 3.0
VGS=5.0V, ID=50mA, TJ=125C 5.0
Forward Transconductance (gFS) VDS =10V, ID=200mA 200 mS
Capacitance (f=1.0MHz) Crss VDS=25V, VGS=0 7.0 pF
Ciss VDS=25V, VGS=0 70 pF
Coss VDS=25V, VGS=0 15 pF
Switching Time (ton, toff) VDD=30V, VGS=10V, ID=200mA, RG=25, RL=150 20 ns
Diode Reverse Leakage Current (IR) VR=10V 30 A
VR=30V 100 A
Diode Breakdown Voltage (BVR) IR=500A 40 V
Diode Forward Voltage (VF) IF=100A 0.13 V
IF=1.0mA 0.21 V
IF=10mA 0.27 V
IF=100mA 0.35 V
IF=500mA 0.47 V
Diode Junction Capacitance (CJ) VR=1.0V, f=1.0MHz 50 pF
Lead Code 1) Gate Q1, 2) Source Q1, 3) Cathode D1, 4) Anode D1, 5) Anode D1, 6) Drain Q1

Note: The CMLM8205 is classified as End of Life (EOL). Please refer to Central Semiconductor for last purchase and shipment dates, and potential minimum order quantities.


2410311148_Central-CMLM8205-TR_C22277403.pdf

Company Details

Bronze Gleitlager

,

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 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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