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{"title":"silicon carbide fet onsemi UF4C120070K4S 1200 volt to 247 4l package suitable","imgUrl":"https:\/\/img.chinax.com\/nimg\/52\/2c\/fc5eb10e10da0e63d6ef2101e37d-200x200-1\/silicon_carbide_fet_onsemi_uf4c120070k4s_1200_volt_to_247_4l_package_suitable.jpg","attrs":{"Description":"TO-247-4 JFETs RoHS","Mfr. Part #":"UF4C120070K4S","Model Number":"UF4C120070K4S","Package":"TO-247-4"}}
{"title":"Low level analog switching device onsemi J112 N channel switch Pb free with","imgUrl":"https:\/\/img.chinax.com\/nimg\/94\/e5\/8f54852c6e9c3d0332fe0db90c66-200x200-1\/low_level_analog_switching_device_onsemi_j112_n_channel_switch_pb_free_with_interchangeable_source_and_drain_terminals.jpg","attrs":{"Operating Temperature":"-55\u2103~+150\u2103@(Tj)","Pd - Power Dissipation":"625mW","Drain Current (Idss)":"5mA@15V","FET Type":"-"}}
{"title":"Automotive grade P Channel depletion mode JFET onsemi MMBFJ175LT1G with AEC Q101","imgUrl":"https:\/\/img.chinax.com\/nimg\/6f\/19\/17e7b5a0fd19930b0f3b4c86add1-200x200-1\/automotive_grade_p_channel_depletion_mode_jfet_onsemi_mmbfj175lt1g_with_aec_q101_certification_and_rohs_compliance.jpg","attrs":{"Ciss-Input Capacitance":"11pF@10V","Operating Temperature":"-55\u2103~+150\u2103@(Tj)","Pd - Power Dissipation":"225mW","Drain Current (Idss)":"7mA@15V"}}
{"title":"Silicon Carbide Cascode JFET onsemi UF3C120080K3S designed for switching in","imgUrl":"https:\/\/img.chinax.com\/nimg\/33\/39\/74f12388db97118abe082e4e0f25-200x200-1\/silicon_carbide_cascode_jfet_onsemi_uf3c120080k3s_designed_for_switching_in_motor_drives_and_power_supplies.jpg","attrs":{"Description":"TO-247-3 JFETs RoHS","Mfr. Part #":"UF3C120080K3S","Model Number":"UF3C120080K3S","Package":"TO-247-3"}}
{"title":"N Channel JFET Switching Transistor onsemi MMBF4393LT1G AECQ101 Qualified PPAP","imgUrl":"https:\/\/img.chinax.com\/nimg\/28\/b2\/8aca8301415968200a3456f2322d-200x200-1\/n_channel_jfet_switching_transistor_onsemi_mmbf4393lt1g_aecq101_qualified_ppap_capable_sot23_package.jpg","attrs":{"Ciss-Input Capacitance":"14pF@15V","Operating Temperature":"-55\u2103~+150\u2103@(Tj)","Pd - Power Dissipation":"225mW","Drain Current (Idss)":"5mA@15V"}}
{"title":"Compact N Channel JFET onsemi 2SK3557 7 TB E for AM tuner RF amplification and","imgUrl":"https:\/\/img.chinax.com\/nimg\/d1\/c5\/6ec8caa1d74db780222dcd08f239-200x200-1\/compact_n_channel_jfet_onsemi_2sk3557_7_tb_e_for_am_tuner_rf_amplification_and_low_noise_applications.jpg","attrs":{"Ciss-Input Capacitance":"35pF@5V","Drain Current (Idss)":"32mA@5V","Pd - Power Dissipation":"200mW","FET Type":"1 N-channel"}}
{"title":"High current capacity N channel MOSFET SANKEN 2SK3710 for power management and","imgUrl":"https:\/\/img.chinax.com\/nimg\/ed\/bb\/08c229fc05e0f03fb9adffb79a96-200x200-1\/high_current_capacity_n_channel_mosfet_sanken_2sk3710_for_power_management_and_motor_drive_circuits.jpg","attrs":{"Description":"JFETs RoHS","Mfr. Part #":"2SK3710","Model Number":"2SK3710"}}
The UF4C120070K4S is a 1200 V, 72 m SiC FET designed for high-performance power applications. It utilizes a unique cascode configuration combining a normally-on SiC JFET with a Si MOSFET to achieve a normally-off device with standard gate-drive characteristics. This makes it a direct replacement for Si IGBTs, Si FETs, SiC MOSFETs, and Si superjunction devices. The device offers ultra-low gate charge, exceptional reverse recovery, and is ideal for switching inductive loads. It is available in a TO-247-4L package for faster switching and cleaner gate waveforms.
