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Hefei Purple Horn E-Commerce Co., Ltd.

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China N Channel RF Amplifier onsemi BF256B Featuring Gate Source Breakdown Voltage for
China N Channel RF Amplifier onsemi BF256B Featuring Gate Source Breakdown Voltage for

  1. China N Channel RF Amplifier onsemi BF256B Featuring Gate Source Breakdown Voltage for

N Channel RF Amplifier onsemi BF256B Featuring Gate Source Breakdown Voltage for

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Ciss-Input Capacitance -
Operating Temperature -55℃~+150℃
FET Type 1 N-channel
Pd - Power Dissipation 350mW
Drain Current (Idss) -
RDS(on) -
Gate-Source Breakdown Voltage (Vgss) -
Gate-Source Cutoff Voltage (VGS(off)) 500mV@10nA
Description 1 N-channel 350mW TO-92-3 JFETs RoHS
Mfr. Part # BF256B
Package TO-92-3
Model Number BF256B

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Product Specification

Ciss-Input Capacitance - Operating Temperature -55℃~+150℃
FET Type 1 N-channel Pd - Power Dissipation 350mW
Drain Current (Idss) - RDS(on) -
Gate-Source Breakdown Voltage (Vgss) - Gate-Source Cutoff Voltage (VGS(off)) 500mV@10nA
Description 1 N-channel 350mW TO-92-3 JFETs RoHS Mfr. Part # BF256B
Package TO-92-3 Model Number BF256B

ON Semiconductor BF256B N-Channel RF Amplifiers

The BF256B is an N-Channel RF Amplifier designed for VHF/UHF applications. Sourced from process 50, this device offers reliable performance for amplifier circuits.

Product Attributes

  • Brand: ON Semiconductor (formerly Fairchild Semiconductor)
  • Product Type: N-Channel RF Amplifier
  • Part Number: BF256B
  • Top Mark: BF256B
  • Package: TO-92 3L
  • Origin: Sourced from process 50

Technical Specifications

Parameter Conditions Min. Max. Unit
Gate-Source Breakdown Voltage (V(BR)GSS) VDS = 0, IG = 1 A -30 V
Gate-Source Voltage (VGS) VDS = 15 V, ID = 200 A -0.5 -7.5 V
Gate-Source Cut-Off Voltage (VGS(off)) VDS = 15 V, ID = 10 nA -0.5 -8.0 V
Gate Reverse Current (IGSS) VGS = -20 V, VDS = 0 -5 nA
Zero-Gate Voltage Drain Current (IDSS) VDS = 15 V, VGS = 0 6 13 mA
Common Source Forward Transconductance (gfs) VDS = 15 V, VGS = 0, f= 1 kHz 4.5 mmhos
Drain-Gate Voltage (VDG) 30 V
Gate-Source Voltage (VGS) -30 V
Forward Gate Current (IGF) 10 mA
Operating and Storage Temperature Range (TJ, TSTG) -55 150 C
Total Device Dissipation (PD) at TA = 25C 350 mW
Derate Above 25C 2.8 mW/C

Note: Part numbers containing underscores (_) from Fairchild may have been updated to dashes (-) to comply with ON Semiconductor's system requirements. Please verify updated device numbers on the ON Semiconductor website.


2411272026_onsemi-BF256B_C2892081.pdf

Company Details

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  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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