| Ciss-Input Capacitance | 5pF@10V |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Pd - Power Dissipation | 225mW |
| Drain Current (Idss) | 24mA@10V |
| FET Type | - |
| RDS(on) | - |
| Gate-Source Breakdown Voltage (Vgss) | 25V |
| Gate-Source Cutoff Voltage (VGS(off)) | 2.5V@1nA |
| Description | 225mW 24mA@10V 25V SOT-23 JFETs RoHS |
| Mfr. Part # | MMBFU310LT1G |
| Package | SOT-23 |
| Model Number | MMBFU310LT1G |
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Product Specification
| Ciss-Input Capacitance | 5pF@10V | Operating Temperature | -55℃~+150℃@(Tj) |
| Pd - Power Dissipation | 225mW | Drain Current (Idss) | 24mA@10V |
| FET Type | - | RDS(on) | - |
| Gate-Source Breakdown Voltage (Vgss) | 25V | Gate-Source Cutoff Voltage (VGS(off)) | 2.5V@1nA |
| Description | 225mW 24mA@10V 25V SOT-23 JFETs RoHS | Mfr. Part # | MMBFU310LT1G |
| Package | SOT-23 | Model Number | MMBFU310LT1G |
The MMBFU310LT1G is an N-Channel JFET Transistor designed for various electronic applications. This device is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant, ensuring environmental responsibility. It offers reliable performance with key features like specified breakdown voltage, low leakage currents, and defined on-characteristics.
| Characteristic | Symbol | Min | Max | Unit | Notes |
| OFF CHARACTERISTICS | |||||
| GateSource Breakdown Voltage | V(BR)GSS | -25 | - | Vdc | (IG = 1.0 mAdc, VDS = 0) |
| Gate Leakage Current | IG1SS | - | -150 | pA | (VGS = 15 Vdc, VDS = 0) |
| Gate Leakage Current (TA = 125C) | IG2SS | - | -150 | nAdc | (VGS = 15 Vdc, VDS = 0, TA = 125C) |
| Gate Source Cutoff Voltage | VGS(off) | -2.5 | -6.0 | Vdc | (VDS = 10 Vdc, ID = 1.0 nAdc) |
| ON CHARACTERISTICS | |||||
| ZeroGateVoltage Drain Current | IDSS | 24 | 60 | mAdc | (VDS = 10 Vdc, VGS = 0) |
| GateSource Forward Voltage | VGS(f) | - | 1.0 | Vdc | (IG = 10 mAdc, VDS = 0) |
| SMALLSIGNAL CHARACTERISTICS | |||||
| Forward Transfer Admittance | |Yfs| | 10 | 18 | mmhos | (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) |
| Output Admittance | |yos| | - | 250 | mhos | (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) |
| Input Capacitance | Ciss | - | 5.0 | pF | (VGS = 10 Vdc, VDS = 0 Vdc, f = 1.0 MHz) |
| Reverse Transfer Capacitance | Crss | - | 2.5 | pF | (VGS = 10 Vdc, VDS = 0 Vdc, f = 1.0 MHz) |
| MAXIMUM RATINGS | |||||
| DrainSource Voltage | VDS | - | 25 | Vdc | |
| GateSource Voltage | VGS | - | 25 | Vdc | |
| Gate Current | IG | - | 10 | mAdc | |
| THERMAL CHARACTERISTICS | |||||
| Total Device Dissipation (FR5 Board, TA = 25C) | PD | - | 225 | mW | (Note 1) |
| Derate above 25C | - | 1.8 | mW/C | ||
| Thermal Resistance, JunctiontoAmbient | R JA | - | 556 | C/W | |
| Junction and Storage Temperature | TJ, Tstg | -55 | +150 | C | |
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Importer
Year Established:
2009
Employee Number:
300~500
Ecer Certification:
Verified Supplier
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