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Hefei Purple Horn E-Commerce Co., Ltd.

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China Pb Free Semiconductor N Channel JFET Transistor onsemi MMBFU310LT1G RoHS
China Pb Free Semiconductor N Channel JFET Transistor onsemi MMBFU310LT1G RoHS

  1. China Pb Free Semiconductor N Channel JFET Transistor onsemi MMBFU310LT1G RoHS

Pb Free Semiconductor N Channel JFET Transistor onsemi MMBFU310LT1G RoHS

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Ciss-Input Capacitance 5pF@10V
Operating Temperature -55℃~+150℃@(Tj)
Pd - Power Dissipation 225mW
Drain Current (Idss) 24mA@10V
FET Type -
RDS(on) -
Gate-Source Breakdown Voltage (Vgss) 25V
Gate-Source Cutoff Voltage (VGS(off)) 2.5V@1nA
Description 225mW 24mA@10V 25V SOT-23 JFETs RoHS
Mfr. Part # MMBFU310LT1G
Package SOT-23
Model Number MMBFU310LT1G

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  1. Product Details
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Product Specification

Ciss-Input Capacitance 5pF@10V Operating Temperature -55℃~+150℃@(Tj)
Pd - Power Dissipation 225mW Drain Current (Idss) 24mA@10V
FET Type - RDS(on) -
Gate-Source Breakdown Voltage (Vgss) 25V Gate-Source Cutoff Voltage (VGS(off)) 2.5V@1nA
Description 225mW 24mA@10V 25V SOT-23 JFETs RoHS Mfr. Part # MMBFU310LT1G
Package SOT-23 Model Number MMBFU310LT1G

Product Overview

The MMBFU310LT1G is an N-Channel JFET Transistor designed for various electronic applications. This device is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant, ensuring environmental responsibility. It offers reliable performance with key features like specified breakdown voltage, low leakage currents, and defined on-characteristics.

Product Attributes

  • Brand: Semiconductor Components Industries, LLC (ON Semiconductor)
  • Certifications: PbFree, Halogen Free/BFR Free, RoHS Compliant

Technical Specifications

CharacteristicSymbolMinMaxUnitNotes
OFF CHARACTERISTICS
GateSource Breakdown VoltageV(BR)GSS-25-Vdc(IG = 1.0 mAdc, VDS = 0)
Gate Leakage CurrentIG1SS--150pA(VGS = 15 Vdc, VDS = 0)
Gate Leakage Current (TA = 125C)IG2SS--150nAdc(VGS = 15 Vdc, VDS = 0, TA = 125C)
Gate Source Cutoff VoltageVGS(off)-2.5-6.0Vdc(VDS = 10 Vdc, ID = 1.0 nAdc)
ON CHARACTERISTICS
ZeroGateVoltage Drain CurrentIDSS2460mAdc(VDS = 10 Vdc, VGS = 0)
GateSource Forward VoltageVGS(f)-1.0Vdc(IG = 10 mAdc, VDS = 0)
SMALLSIGNAL CHARACTERISTICS
Forward Transfer Admittance|Yfs|1018mmhos(VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
Output Admittance|yos|-250mhos(VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz)
Input CapacitanceCiss-5.0pF(VGS = 10 Vdc, VDS = 0 Vdc, f = 1.0 MHz)
Reverse Transfer CapacitanceCrss-2.5pF(VGS = 10 Vdc, VDS = 0 Vdc, f = 1.0 MHz)
MAXIMUM RATINGS
DrainSource VoltageVDS-25Vdc
GateSource VoltageVGS-25Vdc
Gate CurrentIG-10mAdc
THERMAL CHARACTERISTICS
Total Device Dissipation (FR5 Board, TA = 25C)PD-225mW(Note 1)
Derate above 25C-1.8mW/C
Thermal Resistance, JunctiontoAmbientR JA-556C/W
Junction and Storage TemperatureTJ, Tstg-55+150C

2410010303_onsemi-MMBFU310LT1G_C146720.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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