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Hefei Purple Horn E-Commerce Co., Ltd.

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China N Channel RF Amplifier onsemi MMBF5484 Compact SOT 23 Package Low On Resistance
China N Channel RF Amplifier onsemi MMBF5484 Compact SOT 23 Package Low On Resistance

  1. China N Channel RF Amplifier onsemi MMBF5484 Compact SOT 23 Package Low On Resistance

N Channel RF Amplifier onsemi MMBF5484 Compact SOT 23 Package Low On Resistance

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Ciss-Input Capacitance -
Pd - Power Dissipation -
Drain Current (Idss) -
FET Type -
RDS(on) -
Gate-Source Breakdown Voltage (Vgss) -
Gate-Source Cutoff Voltage (VGS(off)) -
Description SOT-23 JFETs RoHS
Mfr. Part # MMBF5484
Package SOT-23
Model Number MMBF5484

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  1. Product Details
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Product Specification

Ciss-Input Capacitance - Pd - Power Dissipation -
Drain Current (Idss) - FET Type -
RDS(on) - Gate-Source Breakdown Voltage (Vgss) -
Gate-Source Cutoff Voltage (VGS(off)) - Description SOT-23 JFETs RoHS
Mfr. Part # MMBF5484 Package SOT-23
Model Number MMBF5484

N-Channel RF Amplifier MMBF5484, MMBF5485, MMBF5486

This N-Channel RF Amplifier is designed primarily for electronic switching applications, offering low On Resistance for analog switching. Sourced from Process 50, these devices are suitable for various RF applications.

Product Attributes

  • Brand: onsemi
  • Package: SOT-23
  • Material: Pb-Free (indicated on ordering information)

Technical Specifications

Parameter Test Condition MMBF5484 MMBF5485 MMBF5486 Unit
Absolute Maximum Ratings
Drain-Gate Voltage (VDG) 25 V
Gate-Source Voltage (VGS) -25 V
Forward Gate Current (IGF) 10 mA
Operating and Storage Junction Temperature Range (TJ, Tstg) -55 to +150 C
Thermal Characteristics
Total Device Dissipation (PD) (TA = 25C) 225 mW
Derate above 25C 1.8 mW/C
Thermal Resistance, Junction to Ambient (RJA) (Device mounted on FR-4 PCB 1.6 x 1.6 x 0.06) 556 C/W
Electrical Characteristics
Gate-Source Breakdown Voltage (V(BR)GSS) IG = -1.0 A, VDS = 0 -25 -25 -25 V
Gate Reverse Current (IGSS) VGS = -20 V, VDS = 0 -1.0 -1.0 -1.0 nA
Gate Reverse Current (IGSS) VGS = -20 V, VDS = 0, TA = 100C -0.2 -0.2 -0.2 µA
Gate-Source Cutoff Voltage (VGS(off)) VDS = 15 V, ID = 10 nA -0.3 to -3.0 -0.5 to -4.0 -2.0 to -6.0 V
Zero-Gate Voltage Drain Current (IDSS) VDS = 15 V, VGS = 0 1.0 to 5.0 4.0 to 10 8.0 to 20 mA
Forward Transfer Conductance (gfs) VDS = 15 V, VGS = 0, f = 1.0 kHz 3000 to 6000 3500 to 7000 4000 to 8000 mhos
Input Conductance (Re(yis)) VDS = 15 V, VGS = 0, f = 100 MHz 100 mhos
Input Conductance (Re(yis)) VDS = 15 V, VGS = 0, f = 400 kHz 1000 1000 mhos
Output Conductance (gos) VDS = 15 V, VGS = 0, f = 1.0 kHz 50 60 75 mhos
Output Conductance (Re(yos)) VDS = 15 V, VGS = 0, f = 100 MHz 75 mhos
Output Conductance (Re(yos)) VDS = 15 V, VGS = 0, f = 400 MHz 100 100 mhos
Forward Transconductance (Re(yfs)) VDS = 15 V, VGS = 0, f = 100 MHz 2500 mhos
Forward Transconductance (Re(yfs)) VDS = 15 V, VGS = 0, f = 400 MHz 3000 3500 mhos
Input Capacitance (Ciss) VDS = 15 V, VGS = 0, f = 1.0 MHz 5.0 5.0 5.0 pF
Reverse Transfer Capacitance (Crss) VDS = 15 V, VGS = 0, f = 1.0 MHz 1.0 1.0 1.0 pF
Output Capacitance (Coss) VDS = 15 V, VGS = 0, f = 1.0 MHz 2.0 2.0 2.0 pF
Noise Figure (NF) VDS = 15 V, RG = 1.0 kΩ, f = 100 MHz 3.0 dB
Noise Figure (NF) VDS = 15 V, RG = 1.0 kΩ, f = 400 MHz 4.0 dB
Noise Figure (NF) VDS = 15 V, RG = 1.0 kΩ, f = 100 MHz 2.0 2.0 dB
Noise Figure (NF) VDS = 15 V, RG = 1.0 kΩ, f = 400 MHz 4.0 4.0 dB

2504301750_onsemi-MMBF5484_C274687.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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