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Hefei Purple Horn E-Commerce Co., Ltd.

  • China,Hefei ,Anhui
  • Verified Supplier
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China 263 7 packaged Silicon Carbide FET onsemi UF3C120400B7S for switching in power
China 263 7 packaged Silicon Carbide FET onsemi UF3C120400B7S for switching in power

  1. China 263 7 packaged Silicon Carbide FET onsemi UF3C120400B7S for switching in power

263 7 packaged Silicon Carbide FET onsemi UF3C120400B7S for switching in power

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Description D2PAK-7 JFETs RoHS
Mfr. Part # UF3C120400B7S
Package D2PAK-7
Model Number UF3C120400B7S

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  1. Product Details
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Product Specification

Description D2PAK-7 JFETs RoHS Mfr. Part # UF3C120400B7S
Package D2PAK-7 Model Number UF3C120400B7S

Product Description

This Silicon Carbide (SiC) FET device features a unique cascode circuit configuration, combining a normally-on SiC JFET with a Si MOSFET to create a normally-off SiC FET. Its standard gate-drive characteristics enable it to serve as a direct replacement for Si IGBTs, Si FETs, SiC MOSFETs, and Si superjunction devices. Available in the TO-263-7 package, this device offers ultra-low gate charge and exceptional reverse recovery, making it ideal for switching inductive loads and applications requiring standard gate drive.

Product Attributes

  • Brand: onsemi
  • Material: Silicon Carbide (SiC)
  • Certifications: Pb-Free, Halogen Free, RoHS Compliant
  • ESD Protection: HBM Class 2, CDM Class C3

Technical Specifications

ParameterSymbolTest ConditionsValueUnit
General Characteristics
On-resistanceRDS(on)Typ410mΩ
Operating TemperatureMax175°C
Reverse Recovery ChargeQrrTyp51nC
Body Diode Forward VoltageVFSDTyp1.5V
Gate ChargeQGTyp22.5nC
Drain-source Breakdown VoltageBVDSVGS = 0 V, ID = 1 mA1200V
Total Drain Leakage CurrentIDSSVDS = 1200 V, VGS = 0 V, TJ = 25 °C0.4µA
Total Gate Leakage CurrentIGSSVDS = 0 V, TJ = 25 °C, VGS = -20 V / +20 V±20nA
Gate Threshold VoltageVG(th)VDS = 5 V, ID = 10 mA3 - 6V
Maximum Ratings
Drain-source VoltageVDSDC1200V
Gate-source VoltageVGSDC-25 to +25V
Continuous Drain CurrentIDTC = 25 °C7.6A
Pulsed Drain CurrentIDMTC = 25 °C14A
Power DissipationPtotTC = 25 °C100W
Maximum Junction TemperatureTJ, max175°C
Operating and Storage TemperatureTJ, TSTG-55 to 175°C
Thermal Characteristics
Thermal Resistance, Junction-to-CaseR JC1.2 - 1.5°C/W

2509301015_onsemi-UF3C120400B7S_C45343122.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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