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Hefei Purple Horn E-Commerce Co., Ltd.

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China Silicon carbide cascode fet onsemi UJ4C075023K4S designed for ev charging and pv
China Silicon carbide cascode fet onsemi UJ4C075023K4S designed for ev charging and pv

  1. China Silicon carbide cascode fet onsemi UJ4C075023K4S designed for ev charging and pv

Silicon carbide cascode fet onsemi UJ4C075023K4S designed for ev charging and pv

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Description TO-247-4 JFETs RoHS
Mfr. Part # UJ4C075023K4S
Package TO-247-4
Model Number UJ4C075023K4S

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Product Specification

Description TO-247-4 JFETs RoHS Mfr. Part # UJ4C075023K4S
Package TO-247-4 Model Number UJ4C075023K4S

Product Overview

The UJ4C075023K4S is a 750 V, 23 m SiC FET designed for high-performance power applications. It utilizes a unique cascode configuration, combining a normally-on SiC JFET with a Si MOSFET to achieve a normally-off device with standard gate drive characteristics. This makes it a direct replacement for Si IGBTs, Si FETs, SiC MOSFETs, and Si superjunction devices. Available in a TO-247-4L package, it offers ultra-low gate charge and excellent reverse recovery, making it ideal for switching inductive loads and applications requiring standard gate drive. Key applications include EV Charging, PV Inverters, Switch Mode Power Supplies, Power Factor Correction Modules, Motor Drives, and Induction Heating.

Product Attributes

  • Brand: onsemi
  • Material: Silicon Carbide (SiC)
  • Certifications: Pb-Free, Halogen Free, RoHS Compliant
  • Package: TO-247-4L

Technical Specifications

ParameterSymbolTest ConditionsValueUnit
Maximum Ratings
Drain-source VoltageVDS750V
Gate-source VoltageVGSDC-20 to +20V
Gate-source VoltageVGSAC (f > 1 Hz)-25 to +25V
Continuous Drain CurrentIDTC = 25 C66A
Continuous Drain CurrentIDTC = 100 C49A
Pulsed Drain CurrentIDMTC = 25 C196A
Single Pulsed Avalanche EnergyEASL = 15 mH, IAS = 3 A67mJ
SiC FET dv/dt Ruggednessdv/dtVDS 500 V150V/ns
Power DissipationPtotTC = 25 C306W
Maximum Junction TemperatureTJ, max175C
Operating and Storage TemperatureTJ, TSTG-55 to 175C
Max. Lead Temperature for Soldering, 1/8 from Case for 5 secondsTL250C
Thermal Characteristics
Thermal Resistance, Junction-to-CaseRJC0.38 (typ), 0.49 (max)C/W
Electrical Characteristics (TJ = +25 C unless otherwise specified)
Typical Performance - Static
Drain-source Breakdown VoltageBVDSVGS = 0 V, ID = 1 mA750V
Total Drain Leakage CurrentIDSSVDS = 750 V, VGS = 0 V, TJ = 25 C2 (typ), 30 (max)A
Total Drain Leakage CurrentIDSSVDS = 750 V, VGS = 0 V, TJ = 175C15 (typ)A
Total Gate Leakage CurrentIGSSVDS = 0 V, TJ = 25 C-6 (VGS=-20V), 20 (VGS=+20V)nA
Drain-source On-resistanceRDS(on)VGS = 12 V, ID = 40 A, TJ = 25C23 (typ), 29 (max)m
Drain-source On-resistanceRDS(on)VGS = 12 V, ID = 40 A, TJ = 125C39 (typ)m
Drain-source On-resistanceRDS(on)VGS = 12 V, ID = 40 A, TJ = 175C50 (typ)m
Gate Threshold VoltageVG(th)VDS = 5 V, ID = 10 mA4.8 (typ)V
Gate ResistanceRGf = 1 MHz, open drain4.5 (typ)
Typical Performance - Reverse Diode
Diode Continuous Forward CurrentISTC = 25 C66A
Diode Pulse CurrentIS, pulseTC = 25 C196A
Forward VoltageVFSDVGS = 0 V, IS = 20 A, TJ = 25 C1.23 (typ), 1.39 (max)V
Forward VoltageVFSDVGS = 0 V, IS = 20 A, TJ = 175 C1.45 (typ)V
Reverse Recovery ChargeQrrVDS = 400 V, IS = 40 A, VGS = 0 V, RG_EXT = 5 , di/dt = 3100 A/s, TJ = 25 C105 (typ)nC
Reverse Recovery TimetrrVDS = 400 V, IS = 40 A, VGS = 0 V, RG_EXT = 5 , di/dt = 3100 A/s, TJ = 25 C12 (typ)ns
Reverse Recovery ChargeQrrVDS = 400 V, IS = 40 A, VGS = 0 V, RG_EXT = 5 , di/dt = 3100 A/s, TJ = 150 C112 (typ)nC
Reverse Recovery TimetrrVDS = 400 V, IS = 40 A, VGS = 0 V, RG_EXT = 5 , di/dt = 3100 A/s, TJ = 150 C13 (typ)ns
Typical Performance - Dynamic
Input CapacitanceCissVDS = 400 V, VGS = 0 V, f = 100 kHz1400 (typ)pF
Output CapacitanceCossVDS = 400 V, VGS = 0 V, f = 100 kHz93 (typ)pF
Reverse Transfer CapacitanceCrssVDS = 400 V, VGS = 0 V, f = 100 kHz2.5 (typ)pF
Effective Output Capacitance, Energy RelatedCoss(er)VDS = 0 V to 400 V, VGS = 0 V116 (typ)pF
Effective Output Capacitance, Time RelatedCoss(tr)VDS = 0 V to 400 V, VGS = 0 V232 (typ)pF
Stored Energy in CossEossVDS = 400 V, VGS = 0 V9.3 (typ)J
Total Gate ChargeQGVDS = 400 V, ID = 40 A, VGS = 0 V to 15 V37.8 (typ)nC
Gate-drain ChargeQGDVDS = 400 V, ID = 40 A, VGS = 0 V to 15 V8 (typ)nC
Gate-source ChargeQGSVDS = 400 V, ID = 40 A, VGS = 0 V to 15 V11.8 (typ)nC
Turn-on Delay Timetd(on)VDS = 400 V, ID = 40 A, Gate Driver = 0 V to +15 V, Turn-on RG,EXT = 1 , Turn-off RG,EXT = 5 , Inductive Load, TJ = 25 C16 (typ)ns
Rise TimetrVDS = 400 V, ID = 40 A, Gate Driver = 0 V to +15 V, Turn-on RG,EXT = 1 , Turn-off RG,EXT = 5 , Inductive Load, TJ = 25 C27 (typ)ns
Turn-off Delay Timetd(off)VDS = 400 V, ID = 40 A, Gate Driver = 0 V to +15 V, Turn-on RG,EXT = 1 , Turn-off RG,EXT = 5 , Inductive Load, TJ = 25 C28 (typ)ns
Fall TimetfVDS = 400 V, ID = 40 A, Gate Driver = 0 V to +15 V, Turn-on RG,EXT = 1 , Turn-off RG,EXT = 5 , Inductive Load, TJ = 25 C8 (typ)ns
Turn-on Energy Including RS EnergyEONVDS = 400 V, ID = 40 A, Gate Driver = 0 V to +15 V, Turn-on RG,EXT = 1 , Turn-off RG,EXT = 5 , Inductive Load, TJ = 25 C237 (typ)J
Turn-off Energy Including RS EnergyEOFFVDS = 400 V, ID = 40 A, Gate Driver = 0 V to +15 V, Turn-on RG,EXT = 1 , Turn-off RG,EXT = 5 , Inductive Load, TJ = 25 C50 (typ)J
Total Switching EnergyETOTALVDS = 400 V, ID = 40 A, Gate Driver = 0 V to +15 V, Turn-on RG,EXT = 1 , Turn-off RG,EXT = 5 , Inductive Load, TJ = 25 C287 (typ)J
Turn-on Delay Timetd(on)VDS = 400 V, ID = 40 A, Gate Driver = 0 V to +15 V, Turn-on RG,EXT = 1 , Turn-off RG,EXT = 5 , Inductive Load, TJ = 150 C19 (typ)ns
Rise TimetrVDS = 400 V, ID = 40 A, Gate Driver = 0 V to +15 V, Turn-on RG,EXT = 1 , Turn-off RG,EXT = 5 , Inductive Load, TJ = 150 C24 (typ)ns
Turn-off Delay Timetd(off)VDS = 400 V, ID = 40 A, Gate Driver = 0 V to +15 V, Turn-on RG,EXT = 1 , Turn-off RG,EXT = 5 , Inductive Load, TJ = 150 C29 (typ)ns
Fall TimetfVDS = 400 V, ID = 40 A, Gate Driver = 0 V to +15 V, Turn-on RG,EXT = 1 , Turn-off RG,EXT = 5 , Inductive Load, TJ = 150 C10 (typ)ns
Turn-on Energy Including RS EnergyEONVDS = 400 V, ID = 40 A, Gate Driver = 0 V to +15 V, Turn-on RG,EXT = 1 , Turn-off RG,EXT = 5 , Inductive Load, TJ = 150 C288 (typ)J
Turn-off Energy Including RS EnergyEOFFVDS = 400 V, ID = 40 A, Gate Driver = 0 V to +15 V, Turn-on RG,EXT = 1 , Turn-off RG,EXT = 5 , Inductive Load, TJ = 150 C60 (typ)J
Total Switching EnergyETOTALVDS = 400 V, ID = 40 A, Gate Driver = 0 V to +15 V, Turn-on RG,EXT = 1 , Turn-off RG,EXT = 5 , Inductive Load, TJ = 150 C348 (typ)J

2509091403_onsemi-UJ4C075023K4S_C45343213.pdf

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    2009

  • Employee Number:

    300~500

  • Ecer Certification:

    Verified Supplier

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  • Hefei Purple Horn E-Commerce Co., Ltd.
  • Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
  • https://www.semiconductoric.com/

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